Influence of interlayer roughness on magnetoresistive effect of ferromagnetic tunneling junctions

Y. Ando, M. Yokota, N. Tezuka, T. Miyazaki

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)

Abstract

Ferromagnetic tunneling 80NiFe/Co/Al-oxide/Co junctions with wedge shaped Al-oxide were fabricated. For preparing Al-oxide, pure Al was sputtered without exposure. The tunnel resistance for junctions with sufficiently oxidized Al increased exponentially with increasing dAl. On the other hand, the tunnel resistance for junctions with an air-leak scattered. The tunneling magnetoresistive effect (TMR) was observed at about 7 angstroms Al for junctions without exposure. The surface roughness of the sample without exposure was quite small, while that with an air-leak tended to be large with increasing oxidization time and also dAl. The corresponding tunnel resistance was very small for the junction with the rough interface.

Original languageEnglish
Pages (from-to)155-157
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume198
DOIs
Publication statusPublished - 1999 Jun 1
EventProceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can
Duration: 1998 Jun 141998 Jun 19

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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