TY - JOUR
T1 - Influence of interfaces on crystal growth of Si in SiO2/a-Si/SiO2 layered structures
AU - Tagami, Takashi
AU - Wakayama, Yutaka
AU - Tanaka, Shun ichiro
PY - 1997/1/1
Y1 - 1997/1/1
N2 - The crystal growth Si in SiO2/a-Si/SiO2 layered structures is examined by high resolution transmission electron microscopy. In a thin a-Si layer (10 nm), crystal growth halts with the crystallite size roughly equal to the layer thickness. In a thick layer (50 nm), crystal growth continues beyond the layer thickness. An expression for this halt in growth is derived from the free energy change. The halt in growth of Si crystallites suggests that the a-Si/SiO2 interface and the a-Si/c-Si interface are more stable than the c-Si/SiO2 interface.
AB - The crystal growth Si in SiO2/a-Si/SiO2 layered structures is examined by high resolution transmission electron microscopy. In a thin a-Si layer (10 nm), crystal growth halts with the crystallite size roughly equal to the layer thickness. In a thick layer (50 nm), crystal growth continues beyond the layer thickness. An expression for this halt in growth is derived from the free energy change. The halt in growth of Si crystallites suggests that the a-Si/SiO2 interface and the a-Si/c-Si interface are more stable than the c-Si/SiO2 interface.
UR - http://www.scopus.com/inward/record.url?scp=0031152294&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031152294&partnerID=8YFLogxK
U2 - 10.1143/jjap.36.l734
DO - 10.1143/jjap.36.l734
M3 - Article
AN - SCOPUS:0031152294
VL - 36
SP - L734-L736
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6
ER -