Abstract
X-ray photoelectron spectroscopy studies on the changes in SiO2/Si(111) interface structures and oxidation rates of Si(111) with the progress of oxidation were performed for oxide films formed using atomic oxygen at 400°C. The following results are obtained for the same oxidation condition: 1) an atomically uniform oxidation reaction occurs at the SiO2/Si interface, 2) the oxidation rate changes periodically with the progress of oxidation and decreases significantly at specific interface structures. Therefore, it is revealed that the oxidation rate of Si is influenced by the SiO2/Si interface structure.
Original language | English |
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Pages (from-to) | L68-L70 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 40 |
Issue number | 1 A/B |
DOIs | |
Publication status | Published - 2001 Jan 15 |
Keywords
- Atomic oxygen
- Interface formation
- Layer-by-layer oxidation
- Oxidation rate
- Oxidation reaction
- SiO/Si interface structure
- X-ray photoelectron spectroscopy
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)