Influence of interface structure on oxidation rate of silicon

Kensuke Takahashi, Hiroshi Nohira, Tomohiro Nakamura, Tadahiro Ohmi, Takeo Hattori

    Research output: Contribution to journalArticlepeer-review

    9 Citations (Scopus)


    X-ray photoelectron spectroscopy studies on the changes in SiO2/Si(111) interface structures and oxidation rates of Si(111) with the progress of oxidation were performed for oxide films formed using atomic oxygen at 400°C. The following results are obtained for the same oxidation condition: 1) an atomically uniform oxidation reaction occurs at the SiO2/Si interface, 2) the oxidation rate changes periodically with the progress of oxidation and decreases significantly at specific interface structures. Therefore, it is revealed that the oxidation rate of Si is influenced by the SiO2/Si interface structure.

    Original languageEnglish
    Pages (from-to)L68-L70
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Issue number1 A/B
    Publication statusPublished - 2001 Jan 15


    • Atomic oxygen
    • Interface formation
    • Layer-by-layer oxidation
    • Oxidation rate
    • Oxidation reaction
    • SiO/Si interface structure
    • X-ray photoelectron spectroscopy

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)


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