Influence of interface structure on oxidation rate of silicon

Kensuke Takahashi; Hiroshi Nohira; Tomohiro Nakamura; Tadahiro Ohmi; Takeo Hattori

doi:10.1143/jjap.40.l68

Influence of interface structure on oxidation rate of silicon

Kensuke Takahashi, Hiroshi Nohira, Tomohiro Nakamura, Tadahiro Ohmi, Takeo Hattori

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

X-ray photoelectron spectroscopy studies on the changes in SiO₂/Si(111) interface structures and oxidation rates of Si(111) with the progress of oxidation were performed for oxide films formed using atomic oxygen at 400°C. The following results are obtained for the same oxidation condition: 1) an atomically uniform oxidation reaction occurs at the SiO₂/Si interface, 2) the oxidation rate changes periodically with the progress of oxidation and decreases significantly at specific interface structures. Therefore, it is revealed that the oxidation rate of Si is influenced by the SiO₂/Si interface structure.

Original language	English
Pages (from-to)	L68-L70
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	40
Issue number	1 A/B
DOIs	https://doi.org/10.1143/jjap.40.l68
Publication status	Published - 2001 Jan 15

Keywords

Atomic oxygen
Interface formation
Layer-by-layer oxidation
Oxidation rate
Oxidation reaction
SiO/Si interface structure
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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@article{6d1a0b6da8b14b14acac679060b21491,

title = "Influence of interface structure on oxidation rate of silicon",

abstract = "X-ray photoelectron spectroscopy studies on the changes in SiO2/Si(111) interface structures and oxidation rates of Si(111) with the progress of oxidation were performed for oxide films formed using atomic oxygen at 400°C. The following results are obtained for the same oxidation condition: 1) an atomically uniform oxidation reaction occurs at the SiO2/Si interface, 2) the oxidation rate changes periodically with the progress of oxidation and decreases significantly at specific interface structures. Therefore, it is revealed that the oxidation rate of Si is influenced by the SiO2/Si interface structure.",

keywords = "Atomic oxygen, Interface formation, Layer-by-layer oxidation, Oxidation rate, Oxidation reaction, SiO/Si interface structure, X-ray photoelectron spectroscopy",

author = "Kensuke Takahashi and Hiroshi Nohira and Tomohiro Nakamura and Tadahiro Ohmi and Takeo Hattori",

year = "2001",

month = jan,

day = "15",

doi = "10.1143/jjap.40.l68",

language = "English",

volume = "40",

pages = "L68--L70",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1 A/B",

}

TY - JOUR

T1 - Influence of interface structure on oxidation rate of silicon

AU - Takahashi, Kensuke

AU - Nohira, Hiroshi

AU - Nakamura, Tomohiro

AU - Ohmi, Tadahiro

AU - Hattori, Takeo

PY - 2001/1/15

Y1 - 2001/1/15

N2 - X-ray photoelectron spectroscopy studies on the changes in SiO2/Si(111) interface structures and oxidation rates of Si(111) with the progress of oxidation were performed for oxide films formed using atomic oxygen at 400°C. The following results are obtained for the same oxidation condition: 1) an atomically uniform oxidation reaction occurs at the SiO2/Si interface, 2) the oxidation rate changes periodically with the progress of oxidation and decreases significantly at specific interface structures. Therefore, it is revealed that the oxidation rate of Si is influenced by the SiO2/Si interface structure.

AB - X-ray photoelectron spectroscopy studies on the changes in SiO2/Si(111) interface structures and oxidation rates of Si(111) with the progress of oxidation were performed for oxide films formed using atomic oxygen at 400°C. The following results are obtained for the same oxidation condition: 1) an atomically uniform oxidation reaction occurs at the SiO2/Si interface, 2) the oxidation rate changes periodically with the progress of oxidation and decreases significantly at specific interface structures. Therefore, it is revealed that the oxidation rate of Si is influenced by the SiO2/Si interface structure.

KW - Atomic oxygen

KW - Interface formation

KW - Layer-by-layer oxidation

KW - Oxidation rate

KW - Oxidation reaction

KW - SiO/Si interface structure

KW - X-ray photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=0035862489&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035862489&partnerID=8YFLogxK

U2 - 10.1143/jjap.40.l68

DO - 10.1143/jjap.40.l68

M3 - Article

AN - SCOPUS:0035862489

VL - 40

SP - L68-L70

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1 A/B

ER -