Influence of interface bonds and buffer materials on optical properties of InAs/AlSb quantum wells grown on GaAs substrates

K. Ohtani, A. Sato, Y. Ohno, F. Matsukura, H. Ohno

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

Optical properties of InAs/AlSb multiquantum wells (MQWs) epitaxially grown on GaAs substrates with a buffer layer are shown to be dependent on the type of the interface bond and the buffer layer material. Combinations of the two possible interface bond configurations (In-Sb and Al-As) with the two buffer layer materials (InAs and AlSb) were prepared by molecular beam epitaxy. The photoluminescence intensity (PL) of MQWs was considerably higher for two kinds of structures: (1) the In-Sb bond with the AlSb buffer or (2) the Al-As bond with the InAs buffer. The two other possible combinations resulted in a drastically reduced PL intensity. X-ray diffraction (XRD) measurements revealed that lattice matching between the average lattice constant of MQW and the buffer layer plays a key role in determining the PL intensity.

Original languageEnglish
Pages (from-to)313-317
Number of pages5
JournalApplied Surface Science
Volume159
DOIs
Publication statusPublished - 2000 Jun
Event3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn
Duration: 1999 Oct 251999 Oct 29

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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