The influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells was presented. The importance of fast exciton localization and slow nonradiative recombination was also discussed. It was found that the effective localization depth increased with an increase in InN mole fraction, which give rise to fast exciton localization.
ASJC Scopus subject areas
- Physics and Astronomy(all)