The influence of deposition temperature (Td) of initial amorphous layer on the lateral solid-phase epitaxy (L-SPE) of silicon was investigated in a wide deposition temperature range between -20°C and 405°C. Nomarski optical microscopy, scanning electron microscopy (SEM), cross-sectional transmission microscopy (TEM) and microprobe reflection high-energy electron diffraction (μ-RHEED) techniques were used. A hitherto unnoticed markedly strong correlation was found between Td and L-SPE growth where the lowest deposition temperature of Td = -20°C gave the highest growth rate and best film quality. Detailed SEM and TEM observation of amorphous Si (a-Si) films revealed that there were many vertical pores threading through a-Si films. A new L-SPE growth model explaining Td-dependent growth rate was proposed in terms of growth delay induced by the vertical pores. Low-temperature deposition of initial amorphous layers was shown to be an effective way of achieving high-quality films in a short time.
|Number of pages||10|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||2 A|
|Publication status||Published - 2002 Feb|
- Solid phase
ASJC Scopus subject areas
- Physics and Astronomy(all)