Influence of initial amorphous layer deposition temperature on lateral solid-phase epitaxy of silicon

Masahiro Moniwa, Hideki Hasegawa

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    The influence of deposition temperature (Td) of initial amorphous layer on the lateral solid-phase epitaxy (L-SPE) of silicon was investigated in a wide deposition temperature range between -20°C and 405°C. Nomarski optical microscopy, scanning electron microscopy (SEM), cross-sectional transmission microscopy (TEM) and microprobe reflection high-energy electron diffraction (μ-RHEED) techniques were used. A hitherto unnoticed markedly strong correlation was found between Td and L-SPE growth where the lowest deposition temperature of Td = -20°C gave the highest growth rate and best film quality. Detailed SEM and TEM observation of amorphous Si (a-Si) films revealed that there were many vertical pores threading through a-Si films. A new L-SPE growth model explaining Td-dependent growth rate was proposed in terms of growth delay induced by the vertical pores. Low-temperature deposition of initial amorphous layers was shown to be an effective way of achieving high-quality films in a short time.

    Original languageEnglish
    Pages (from-to)472-481
    Number of pages10
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume41
    Issue number2 A
    DOIs
    Publication statusPublished - 2002 Feb

    Keywords

    • Amorphous
    • Crystallization
    • Epitaxial
    • Evaporation
    • Growth
    • Pore
    • Si
    • Solid phase

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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