Influence of hydrogen radicals on the reduction of carbon incorporation into chemical beam epitaxial GaAs

S. Goto, Y. Nomura, Y. Morishita, Y. Katayama, H. Ohno

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4 Citations (Scopus)

Abstract

In order to investigate the influence of hydrogen radicals (H·) on carbon incorporation into chemical-beam epitaxial GaAs, H· generated by flowing H2 through a hot tungsten filament was intentionally introduced into a trimethylgallium (TMGa)-AsH3 (cracked at 850°C) and a TMGa (or metal Ga)-trisdimethylaminoarsine (TDMAAs) system. In the case of the TMGa-AsH3-H· system, the residual carbon concentrations, measured by secondary ion mass spectrometry, in epitaxial layers grown at 490°C rapidly decreased along with an increase in the H2 flow rate in a low-flow region, and saturated at around 1 × 1018 cm-3 in a higher flow region. On the other hand, carbon incorporation (6 × 1017 cm-3 at 490°C) in TMGa-TDMAAs was less than that in TMGa-AsH3. Since no residual carbon over the detection limit ((1-2) × 1017 cm-3) was detected in metal Ga-TDMAAs, the carbon in TMGa-TDMAAs was clarified as having been derived from TMGa. However, the introduction of H· did not reduce the carbon incorporation in TMGa-TDMAAs. Influence of injected H· on the carbon reduction is discussed in relation to the adsorption of uncracked H2 and surface species derived from TDMAAs on a growing surface.

Original languageEnglish
Pages (from-to)126-132
Number of pages7
JournalJournal of Crystal Growth
Volume144
Issue number3-4
DOIs
Publication statusPublished - 1994 Dec 2
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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