Influence of hole accumulation on source resistance, kink effect and on-state breakdown of InP-based high electron mobility transistors: Light irradiation study

Tetsuya Suemitsu, Hiroshi Fushimi, Satoshi Kodama, Satoshi Tsunashima, Shunji Kimura

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The influence of impact-ionized holes accumulating in the device was studied for InP-based InAlAs/InGaAs HEMTs using light irradiation experiments. Two parasitic phenomena arise from the generation of electron-hole pairs and subsequent accumulation of holes in the body of the device: The hole accumulation in the source region causes the decrease in the source resistance, which eliminates the kink effect. The hole accumulation in the gate region shifts the threshold voltage. This could be a positive feedback that increases the drain current at the on-state breakdown of the device.

Original languageEnglish
Pages (from-to)1104-1107
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number2 B
Publication statusPublished - 2002 Feb 1
Externally publishedYes

Keywords

  • HEMT
  • Impact ionization
  • InGaAs
  • InP
  • Light irradiation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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