Influence of heavy ion irradiation on perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions

Daisuke Kobayashi, Yuya Kakehashi, Kazuyuki Hirose, Shinobu Onoda, Takahiro Makino, Takeshi Ohshima, Shoji Ikeda, Michihiko Yamanouchi, Hideo Sato, Eli Christopher Enobio, Tetsuo Endoh, Hideo Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A non-volatile memory element that is called a perpendicular-anisotropy magnetic tunnel junction has been fabricated in a CoFeB/MgO/CoFeB film stack technology. It exhibits two stable resistance values, high or low, depending on the relative direction of magnetization of the two ferromagnetic CoFeB layers. After programmed into the high resistance state with a current injection scheme based on the spin transfer torque theory, the tunnel junction has been exposed to 15-MeV Si ions in different voltage stress conditions. It has been observed that the tested structure remains in the programmed high resistance state after received the bombardments of several tens of Si ions and more, even under the stressed situations. A time-domain analysis has proven that this result is due to the perfect immunity of the tested magnetic tunnel junction to single event upsets. A resistance degradation due to the heavy-ion irradiation has been detected through a precise parameter analysis based on a tunneling theory but negligibly small, 1%.

Original languageEnglish
Title of host publicationProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467350570
DOIs
Publication statusPublished - 2013 Oct 28
Event2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013 - Oxford, United Kingdom
Duration: 2013 Sep 232013 Sep 27

Publication series

NameProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Other

Other2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013
CountryUnited Kingdom
CityOxford
Period13/9/2313/9/27

Keywords

  • Ion radiation effects
  • magnetic memory
  • perpendicular magnetic anisotropy
  • spin polarized transport
  • tunneling magnetoresistance

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

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