Influence of gate voltage on nonlocal resistance in GaAs/ AlGaAs heterostructure at high magnetic fields

S. Takaoka, K. Tsukagoshi, K. Oto, K. Murase, Y. Takagaki, K. Gamo, S. Namba

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The nonlocal Shubnikov-de Haas (S-dH) resistance has been investigated in a GaAs/AlGaAs wire with Schottky gates across the separation path between current and voltage probes. With decreasing electron concentration below the gate, the up-spin S-dH oscillation peak vanishes at higher electron concentration than the down-spin peak. This can be understood by the fact that the bulk current at the down-spin peak actually consists of both down- and up-spin states and that the one at the up-spin peak consists mostly of the up-spin state. Further the influence of extra probes, which have ostensibly nothing to do with the four-terminal resistance, has been studied by disconnecting the extra probes electrically by the gate across the extra terminal. When the extra probe is disconnected, both normal and nonlocal S-dH oscillation peaks at high magnetic fields are altered.

Original languageEnglish
Pages (from-to)21-25
Number of pages5
JournalPhysica B: Physics of Condensed Matter
Volume184
Issue number1-4
DOIs
Publication statusPublished - 1993 Feb
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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