Influence of forming gas annealing on SiO2/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals

Tomoyuki Suwa; Yuki Kumagai; Akinobu Teramoto; Takayuki Muro; Toyohiko Kinoshita; Shigetoshi Sugawa; Takeo Hattori; Tadahiro Ohmi

doi:10.1149/1.3700911

Influence of forming gas annealing on SiO₂/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals

Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed utilizing oxygen radicals (ORs) and oxygen molecules (OMs) with or without forming gas annealing (FGA) are reported. The SiO₂/Si interface structure formed utilizing ORs were only slightly influenced by FGA. On the other hand, although the thickness of oxide film formed utilizing OMs is weakly influenced by FGA, the FGA-induced nearly 10% decrease in the amounts of Si¹⁺, Si²⁺, and Si³⁺ formed utilizing OMs were found. Therefore, the interface structure formed utilizing OMs is influenced by FGA.

Original language	English
Title of host publication	Dielectrics for Nanosystems 5
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Publisher	Electrochemical Society Inc.
Pages	453-460
Number of pages	8
Edition	3
ISBN (Electronic)	9781607683131
ISBN (Print)	9781566779555
DOIs	https://doi.org/10.1149/1.3700911
Publication status	Published - 2012
Event	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States Duration: 2012 May 6 → 2012 May 10

Publication series

Name	ECS Transactions
Number	3
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Country/Territory	United States
City	Seattle, WA
Period	12/5/6 → 12/5/10

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3700911

Cite this

Suwa, T., Kumagai, Y., Teramoto, A., Muro, T., Kinoshita, T., Sugawa, S., Hattori, T., & Ohmi, T. (2012). Influence of forming gas annealing on SiO₂/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 ed., pp. 453-460). (ECS Transactions; Vol. 45, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.3700911

Influence of forming gas annealing on SiO₂/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals. / Suwa, Tomoyuki; Kumagai, Yuki; Teramoto, Akinobu et al.

Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. p. 453-460 (ECS Transactions; Vol. 45, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Suwa, T, Kumagai, Y, Teramoto, A, Muro, T, Kinoshita, T, Sugawa, S, Hattori, T & Ohmi, T 2012, Influence of forming gas annealing on SiO₂/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals. in Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 edn, ECS Transactions, no. 3, vol. 45, Electrochemical Society Inc., pp. 453-460, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, United States, 12/5/6. https://doi.org/10.1149/1.3700911

Suwa T, Kumagai Y, Teramoto A, Muro T, Kinoshita T, Sugawa S et al. Influence of forming gas annealing on SiO₂/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 ed. Electrochemical Society Inc. 2012. p. 453-460. (ECS Transactions; 3). doi: 10.1149/1.3700911

Suwa, Tomoyuki ; Kumagai, Yuki ; Teramoto, Akinobu et al. / Influence of forming gas annealing on SiO₂/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals. Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. pp. 453-460 (ECS Transactions; 3).

@inproceedings{02bdeacf378a4e3394ff9350be2f7fd7,

title = "Influence of forming gas annealing on SiO2/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals",

abstract = "Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed utilizing oxygen radicals (ORs) and oxygen molecules (OMs) with or without forming gas annealing (FGA) are reported. The SiO2/Si interface structure formed utilizing ORs were only slightly influenced by FGA. On the other hand, although the thickness of oxide film formed utilizing OMs is weakly influenced by FGA, the FGA-induced nearly 10% decrease in the amounts of Si1+, Si2+, and Si3+ formed utilizing OMs were found. Therefore, the interface structure formed utilizing OMs is influenced by FGA.",

author = "Tomoyuki Suwa and Yuki Kumagai and Akinobu Teramoto and Takayuki Muro and Toyohiko Kinoshita and Shigetoshi Sugawa and Takeo Hattori and Tadahiro Ohmi",

year = "2012",

doi = "10.1149/1.3700911",

language = "English",

isbn = "9781566779555",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "3",

pages = "453--460",

booktitle = "Dielectrics for Nanosystems 5",

edition = "3",

note = "5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",

}

TY - GEN

T1 - Influence of forming gas annealing on SiO2/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals

AU - Suwa, Tomoyuki

AU - Kumagai, Yuki

AU - Teramoto, Akinobu

AU - Muro, Takayuki

AU - Kinoshita, Toyohiko

AU - Sugawa, Shigetoshi

AU - Hattori, Takeo

AU - Ohmi, Tadahiro

PY - 2012

Y1 - 2012

N2 - Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed utilizing oxygen radicals (ORs) and oxygen molecules (OMs) with or without forming gas annealing (FGA) are reported. The SiO2/Si interface structure formed utilizing ORs were only slightly influenced by FGA. On the other hand, although the thickness of oxide film formed utilizing OMs is weakly influenced by FGA, the FGA-induced nearly 10% decrease in the amounts of Si1+, Si2+, and Si3+ formed utilizing OMs were found. Therefore, the interface structure formed utilizing OMs is influenced by FGA.

AB - Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed utilizing oxygen radicals (ORs) and oxygen molecules (OMs) with or without forming gas annealing (FGA) are reported. The SiO2/Si interface structure formed utilizing ORs were only slightly influenced by FGA. On the other hand, although the thickness of oxide film formed utilizing OMs is weakly influenced by FGA, the FGA-induced nearly 10% decrease in the amounts of Si1+, Si2+, and Si3+ formed utilizing OMs were found. Therefore, the interface structure formed utilizing OMs is influenced by FGA.

UR - http://www.scopus.com/inward/record.url?scp=84869022139&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869022139&partnerID=8YFLogxK

U2 - 10.1149/1.3700911

DO - 10.1149/1.3700911

M3 - Conference contribution

AN - SCOPUS:84869022139

SN - 9781566779555

T3 - ECS Transactions

SP - 453

EP - 460

BT - Dielectrics for Nanosystems 5

PB - Electrochemical Society Inc.

T2 - 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting

Y2 - 6 May 2012 through 10 May 2012

ER -