@inproceedings{02bdeacf378a4e3394ff9350be2f7fd7,
title = "Influence of forming gas annealing on SiO2/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals",
abstract = "Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed utilizing oxygen radicals (ORs) and oxygen molecules (OMs) with or without forming gas annealing (FGA) are reported. The SiO2/Si interface structure formed utilizing ORs were only slightly influenced by FGA. On the other hand, although the thickness of oxide film formed utilizing OMs is weakly influenced by FGA, the FGA-induced nearly 10% decrease in the amounts of Si1+, Si2+, and Si3+ formed utilizing OMs were found. Therefore, the interface structure formed utilizing OMs is influenced by FGA.",
author = "Tomoyuki Suwa and Yuki Kumagai and Akinobu Teramoto and Takayuki Muro and Toyohiko Kinoshita and Shigetoshi Sugawa and Takeo Hattori and Tadahiro Ohmi",
year = "2012",
doi = "10.1149/1.3700911",
language = "English",
isbn = "9781566779555",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "453--460",
booktitle = "Dielectrics for Nanosystems 5",
edition = "3",
note = "5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",
}