Influence of forming gas annealing on SiO2/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals

Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed utilizing oxygen radicals (ORs) and oxygen molecules (OMs) with or without forming gas annealing (FGA) are reported. The SiO2/Si interface structure formed utilizing ORs were only slightly influenced by FGA. On the other hand, although the thickness of oxide film formed utilizing OMs is weakly influenced by FGA, the FGA-induced nearly 10% decrease in the amounts of Si1+, Si2+, and Si3+ formed utilizing OMs were found. Therefore, the interface structure formed utilizing OMs is influenced by FGA.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 5
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
PublisherElectrochemical Society Inc.
Pages453-460
Number of pages8
Edition3
ISBN (Electronic)9781607683131
ISBN (Print)9781566779555
DOIs
Publication statusPublished - 2012
Event5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
Duration: 2012 May 62012 May 10

Publication series

NameECS Transactions
Number3
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Country/TerritoryUnited States
CitySeattle, WA
Period12/5/612/5/10

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Influence of forming gas annealing on SiO<sub>2</sub>/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals'. Together they form a unique fingerprint.

Cite this