Influence of forming gas annealing on SiO 2/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals

Tomoyuki Suwa; Yuki Kumagai; Akinobu Teramoto; Takayuki Muro; Toyohiko Kinoshita; Shigetoshi Sugawa; Takeo Hattori; Tadahiro Ohmi

doi:10.1149/1.3700911

Influence of forming gas annealing on SiO ₂/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals

Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed utilizing oxygen radicals (ORs) and oxygen molecules (OMs) with or without forming gas annealing (FGA) are reported. The SiO ₂/Si interface structure formed utilizing ORs were only slightly influenced by FGA. On the other hand, although the thickness of oxide film formed utilizing OMs is weakly influenced by FGA, the FGA-induced nearly 10% decrease in the amounts of Si ¹⁺, Si ²⁺, and Si ³⁺ formed utilizing OMs were found. Therefore, the interface structure formed utilizing OMs is influenced by FGA.

Original language	English
Title of host publication	Dielectrics for Nanosystems 5
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Pages	453-460
Number of pages	8
Volume	45
Edition	3
DOIs	https://doi.org/10.1149/1.3700911
Publication status	Published - 2012 Nov 19
Event	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States Duration: 2012 May 6 → 2012 May 10

Other

Other	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Country	United States
City	Seattle, WA
Period	12/5/6 → 12/5/10

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3700911

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Suwa, T., Kumagai, Y., Teramoto, A., Muro, T., Kinoshita, T., Sugawa, S., Hattori, T., & Ohmi, T. (2012). Influence of forming gas annealing on SiO ₂/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 ed., Vol. 45, pp. 453-460) https://doi.org/10.1149/1.3700911

Influence of forming gas annealing on SiO ₂/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals. / Suwa, Tomoyuki; Kumagai, Yuki; Teramoto, Akinobu; Muro, Takayuki; Kinoshita, Toyohiko; Sugawa, Shigetoshi; Hattori, Takeo; Ohmi, Tadahiro.

Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. Vol. 45 3. ed. 2012. p. 453-460.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Suwa, T, Kumagai, Y, Teramoto, A, Muro, T, Kinoshita, T, Sugawa, S, Hattori, T & Ohmi, T 2012, Influence of forming gas annealing on SiO ₂/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals. in Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 edn, vol. 45, pp. 453-460, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, United States, 12/5/6. https://doi.org/10.1149/1.3700911

Suwa T, Kumagai Y, Teramoto A, Muro T, Kinoshita T, Sugawa S et al. Influence of forming gas annealing on SiO ₂/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 ed. Vol. 45. 2012. p. 453-460 https://doi.org/10.1149/1.3700911

Suwa, Tomoyuki ; Kumagai, Yuki ; Teramoto, Akinobu ; Muro, Takayuki ; Kinoshita, Toyohiko ; Sugawa, Shigetoshi ; Hattori, Takeo ; Ohmi, Tadahiro. / Influence of forming gas annealing on SiO ₂/Si(100) interface structures formed utilizing oxygen molecules different from that utilizing oxygen radicals. Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. Vol. 45 3. ed. 2012. pp. 453-460

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abstract = "Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed utilizing oxygen radicals (ORs) and oxygen molecules (OMs) with or without forming gas annealing (FGA) are reported. The SiO 2/Si interface structure formed utilizing ORs were only slightly influenced by FGA. On the other hand, although the thickness of oxide film formed utilizing OMs is weakly influenced by FGA, the FGA-induced nearly 10% decrease in the amounts of Si 1+, Si 2+, and Si 3+ formed utilizing OMs were found. Therefore, the interface structure formed utilizing OMs is influenced by FGA.",

author = "Tomoyuki Suwa and Yuki Kumagai and Akinobu Teramoto and Takayuki Muro and Toyohiko Kinoshita and Shigetoshi Sugawa and Takeo Hattori and Tadahiro Ohmi",

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AU - Muro, Takayuki

AU - Kinoshita, Toyohiko

AU - Sugawa, Shigetoshi

AU - Hattori, Takeo

AU - Ohmi, Tadahiro

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AB - Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed utilizing oxygen radicals (ORs) and oxygen molecules (OMs) with or without forming gas annealing (FGA) are reported. The SiO 2/Si interface structure formed utilizing ORs were only slightly influenced by FGA. On the other hand, although the thickness of oxide film formed utilizing OMs is weakly influenced by FGA, the FGA-induced nearly 10% decrease in the amounts of Si 1+, Si 2+, and Si 3+ formed utilizing OMs were found. Therefore, the interface structure formed utilizing OMs is influenced by FGA.

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