Abstract
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed utilizing oxygen radicals (ORs) and oxygen molecules (OMs) with or without forming gas annealing (FGA) are reported. The SiO 2/Si interface structure formed utilizing ORs were only slightly influenced by FGA. On the other hand, although the thickness of oxide film formed utilizing OMs is weakly influenced by FGA, the FGA-induced nearly 10% decrease in the amounts of Si 1+, Si 2+, and Si 3+ formed utilizing OMs were found. Therefore, the interface structure formed utilizing OMs is influenced by FGA.
Original language | English |
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Title of host publication | Dielectrics for Nanosystems 5 |
Subtitle of host publication | Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices |
Pages | 453-460 |
Number of pages | 8 |
Volume | 45 |
Edition | 3 |
DOIs | |
Publication status | Published - 2012 Nov 19 |
Event | 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States Duration: 2012 May 6 → 2012 May 10 |
Other
Other | 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting |
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Country | United States |
City | Seattle, WA |
Period | 12/5/6 → 12/5/10 |
ASJC Scopus subject areas
- Engineering(all)