Influence of fluorination on electronic states and electron transport properties of Sr2IrO4thin films

Takahiro Maruyama, Akira Chikamatsu, Tsukasa Katayama, Kenta Kuramochi, Hiraku Ogino, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Tetsuya Hasegawa

Research output: Contribution to journalArticlepeer-review

Abstract

We fabricated layered-perovskite Sr2IrO4-xF2x thin films by combining pulsed-laser deposition with topotactic fluorination and investigated their structures, electronic states, and electron transport properties. In the fluorination process, the insertion of fluorine into SrO rock-salt layers and the partial removal of oxygen occurred simultaneously while keeping Ir4+. The fluorine amount was evaluated to be 2x ≈ 3, which was much larger than the bulk value. Optical and photoemission measurements revealed that the effective total angular momentum Jeff = 3/2 is stabilized upon fluorination owing to the large electronegativity of fluorine. The Sr2IrO4-xF2x film exhibited a semiconducting behavior described by Efros-Shklovskii variable-range hopping with ρ(T) ≈ T-1/2. These results will be useful for modifying electronic states by anion doping to explore unprecedented physical properties in Ruddlesden-Popper-type iridates. This journal is

Original languageEnglish
Pages (from-to)8268-8274
Number of pages7
JournalJournal of Materials Chemistry C
Volume8
Issue number24
DOIs
Publication statusPublished - 2020 Jun 28

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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