@inproceedings{b1afb730c0cc4627b26a6fa4d46d2766,
title = "Influence of flash lamp annealing on electrical characteristics of MOS device with Si/La2O3Zn-Si structure",
abstract = "The influence of flash lamp Annealing (FLA) on Si/La2O 3/n-Si structure and electrical characteristics of MOS devices have been studied. Positive shifts in flat-band voltage (Vfb) were observed in devices with FLA followed by PMA. In addition, it was also observed that the FLA on Si/La2O3/n-Si structure is effective in suppressing the leakage current and interface trap charge density.",
author = "T. Kaneda and M. Kouda and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai",
year = "2011",
doi = "10.1149/1.3633295",
language = "English",
isbn = "9781566779074",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "157--164",
booktitle = "ULSI Process Integration 7",
edition = "7",
note = "7th Symposium on ULSI Process Integration - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",
}