Influence of flash lamp annealing on electrical characteristics of MOS device with Si/La2O3Zn-Si structure

T. Kaneda; M. Kouda; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3633295

Influence of flash lamp annealing on electrical characteristics of MOS device with Si/La₂O₃Zn-Si structure

T. Kaneda, M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The influence of flash lamp Annealing (FLA) on Si/La₂O ₃/n-Si structure and electrical characteristics of MOS devices have been studied. Positive shifts in flat-band voltage (V_fb) were observed in devices with FLA followed by PMA. In addition, it was also observed that the FLA on Si/La₂O₃/n-Si structure is effective in suppressing the leakage current and interface trap charge density.

Original language	English
Title of host publication	ULSI Process Integration 7
Publisher	Electrochemical Society Inc.
Pages	157-164
Number of pages	8
Edition	7
ISBN (Electronic)	9781607682615
ISBN (Print)	9781566779074
DOIs	https://doi.org/10.1149/1.3633295
Publication status	Published - 2011
Externally published	Yes
Event	7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States Duration: 2011 Oct 9 → 2011 Oct 14

Publication series

Name	ECS Transactions
Number	7
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	7th Symposium on ULSI Process Integration - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	11/10/9 → 11/10/14

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3633295

Cite this

Kaneda, T., Kouda, M., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2011). Influence of flash lamp annealing on electrical characteristics of MOS device with Si/La₂O₃Zn-Si structure. In ULSI Process Integration 7 (7 ed., pp. 157-164). (ECS Transactions; Vol. 41, No. 7). Electrochemical Society Inc.. https://doi.org/10.1149/1.3633295

Influence of flash lamp annealing on electrical characteristics of MOS device with Si/La₂O₃Zn-Si structure. / Kaneda, T.; Kouda, M.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Natori, K.; Hattori, T.; Iwai, H.

ULSI Process Integration 7. 7. ed. Electrochemical Society Inc., 2011. p. 157-164 (ECS Transactions; Vol. 41, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kaneda, T, Kouda, M, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T & Iwai, H 2011, Influence of flash lamp annealing on electrical characteristics of MOS device with Si/La₂O₃Zn-Si structure. in ULSI Process Integration 7. 7 edn, ECS Transactions, no. 7, vol. 41, Electrochemical Society Inc., pp. 157-164, 7th Symposium on ULSI Process Integration - 220th ECS Meeting, Boston, MA, United States, 11/10/9. https://doi.org/10.1149/1.3633295

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