Influence of electrode size on resistance switching effect in nanogap junctions

Hiroshi Suga; Masayo Horikawa; Shunsuke Odaka; Hisao Miyazaki; Kazuhito Tsukagoshi; Tetsuo Shimizu; Yasuhisa Naitoh

doi:10.1063/1.3481067

Influence of electrode size on resistance switching effect in nanogap junctions

Hiroshi Suga, Masayo Horikawa, Shunsuke Odaka, Hisao Miyazaki, Kazuhito Tsukagoshi, Tetsuo Shimizu, Yasuhisa Naitoh

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The size dependence of the resistance switching effect in nanogap junctions was investigated to determine the nature of the local structural changes responsible for the effect. The maximum current, during resistance switching, decreased with the total emission area across the nanogap to an average of 146 μA at a linewidth of 45 nm. This implies that the resistance switching effect stems from changes in the gap width at multiple local sites on the metal surface.

Original language	English
Article number	073118
Journal	Applied Physics Letters
Volume	97
Issue number	7
DOIs	https://doi.org/10.1063/1.3481067
Publication status	Published - 2010 Aug 16
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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AU - Horikawa, Masayo

AU - Odaka, Shunsuke

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AU - Tsukagoshi, Kazuhito

AU - Shimizu, Tetsuo

AU - Naitoh, Yasuhisa

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AB - The size dependence of the resistance switching effect in nanogap junctions was investigated to determine the nature of the local structural changes responsible for the effect. The maximum current, during resistance switching, decreased with the total emission area across the nanogap to an average of 146 μA at a linewidth of 45 nm. This implies that the resistance switching effect stems from changes in the gap width at multiple local sites on the metal surface.

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Influence of electrode size on resistance switching effect in nanogap junctions

Abstract

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