Influence of electrode size on resistance switching effect in nanogap junctions

Hiroshi Suga, Masayo Horikawa, Shunsuke Odaka, Hisao Miyazaki, Kazuhito Tsukagoshi, Tetsuo Shimizu, Yasuhisa Naitoh

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

The size dependence of the resistance switching effect in nanogap junctions was investigated to determine the nature of the local structural changes responsible for the effect. The maximum current, during resistance switching, decreased with the total emission area across the nanogap to an average of 146 μA at a linewidth of 45 nm. This implies that the resistance switching effect stems from changes in the gap width at multiple local sites on the metal surface.

Original languageEnglish
Article number073118
JournalApplied Physics Letters
Volume97
Issue number7
DOIs
Publication statusPublished - 2010 Aug 16
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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