Influence of electrode materials on CeOx based resistive switching

S. Kano, C. Dou, M. Hadi, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, Y. Kataoka, K. Natori, E. Miranda, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Resistance-change in insulator having ionic bond hardly obtain a large on and off resistance ratio. The influence of the metal electrodes on the resistive switching behavior of CeOx films has been investigated. Resistance switching properties using Ni, W and Ti as bottom electrode were caused by changing resistance of Ce oxide. However, resistance switching characteristics in samples with NiSi2 electrode shows a large on and off window as large as 105. The main differences of the switching properties among the electrode materials are thought to be the reaction between the Ce oxide layer and electrodes. The fact that the set voltage dependence on the thickness of Ce oxide layers has indicated that the switching behavior is based on electric field across the Ce oxide.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2012, CSTIC 2012
PublisherElectrochemical Society Inc.
Pages439-443
Number of pages5
Edition1
ISBN (Electronic)9781607683186
ISBN (Print)9781607683186
DOIs
Publication statusPublished - 2012
Externally publishedYes
EventChina Semiconductor Technology International Conference 2012, CSTIC 2012 - Shanghai, China
Duration: 2012 Mar 182012 Mar 19

Publication series

NameECS Transactions
Number1
Volume44
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherChina Semiconductor Technology International Conference 2012, CSTIC 2012
Country/TerritoryChina
CityShanghai
Period12/3/1812/3/19

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Influence of electrode materials on CeOx based resistive switching'. Together they form a unique fingerprint.

Cite this