Influence of electrode materials on CeOx based resistive switching

S. Kano, C. Dou, M. Hadi, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, Y. Kataoka, K. Natori, E. Miranda, T. Hattori, H. Iwai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Resistance-change in insulator having ionic bond hardly obtain a large on and off resistance ratio. The influence of the metal electrodes on the resistive switching behavior of CeOx films has been investigated. Resistance switching properties using Ni, W and Ti as bottom electrode were caused by changing resistance of Ce oxide. However, resistance switching characteristics in samples with NiSi2 electrode shows a large on and off window as large as 105. The main differences of the switching properties among the electrode materials are thought to be the reaction between the Ce oxide layer and electrodes. The fact that the set voltage dependence on the thickness of Ce oxide layers has indicated that the switching behavior is based on electric field across the Ce oxide.

    Original languageEnglish
    Title of host publicationChina Semiconductor Technology International Conference 2012, CSTIC 2012
    Pages439-443
    Number of pages5
    Edition1
    DOIs
    Publication statusPublished - 2012
    EventChina Semiconductor Technology International Conference 2012, CSTIC 2012 - Shanghai, China
    Duration: 2012 Mar 182012 Mar 19

    Publication series

    NameECS Transactions
    Number1
    Volume44
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    OtherChina Semiconductor Technology International Conference 2012, CSTIC 2012
    Country/TerritoryChina
    CityShanghai
    Period12/3/1812/3/19

    ASJC Scopus subject areas

    • Engineering(all)

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