Influence of chemical equilibrium in introduced oxygen vacancies on resistive switching in epitaxial Pt-CeO2 system

Mykhailo Chundak, Michiko Yoshitake, Michal Vaclavu, Vladimir Matolin, Toyohiro Chikyow

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We investigate the introduction of oxygen vacancies by the interaction of Pt with CeO2(111) (ceria) thin epitaxial film grown on Cu(111) and the influence of the vacancies on resistive switching behavior. For this purpose, we used X-ray photoelectron spectroscopy and conductive atomic force microscopy. We found out that after Pt deposition, the ceria film was partially reduced. By our estimation, the reduction occurs not only at the Pt/CeO2 interface, but also on the surface of the ceria film which is not covered by Pt, after Pt deposition and annealing. A different distribution of oxygen vacancies in the film proves to have an influence on the resistance switching process of the film. Finally, the proper balance between the reduced and the unreduced species in order to obtain relatively stable repeatable resistance switch with clear resistance window is discussed.

Original languageEnglish
Pages (from-to)657-664
Number of pages8
JournalJournal of Solid State Electrochemistry
Volume21
Issue number3
DOIs
Publication statusPublished - 2017 Mar 1
Externally publishedYes

Keywords

  • AFM
  • Ceria
  • Epitaxial
  • Pt
  • ReRAM
  • XPS

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrochemistry
  • Electrical and Electronic Engineering

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