Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors

Kazunori Kurishima, Toshihide Nabatame, Maki Shimizu, Nobuhiko Mitoma, Takio Kizu, Shinya Aikawa, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyo, Atsushi Ogura

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Physics & Astronomy

Chemical Compounds

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