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Influence of Al2O3 gate dielectric on transistor properties for IGZO thin film transistor
Kazunori Kurishima, Toshihide Nabatame, Maki Shimizu, Shinya Aikawa, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyo, Atsushi Ogura
Research output: Contribution to journal › Conference article › peer-review
4
Citations
(Scopus)