Influence of Al2O3 gate dielectric on transistor properties for IGZO thin film transistor

Kazunori Kurishima, Toshihide Nabatame, Maki Shimizu, Shinya Aikawa, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyo, Atsushi Ogura

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Influence of Al2O3 gate dielectric on transistor properties for IGZO thin film transistor'. Together they form a unique fingerprint.

Engineering & Materials Science