TY - JOUR
T1 - Influence of Al2O3 gate dielectric on transistor properties for IGZO thin film transistor
AU - Kurishima, Kazunori
AU - Nabatame, Toshihide
AU - Shimizu, Maki
AU - Aikawa, Shinya
AU - Tsukagoshi, Kazuhito
AU - Ohi, Akihiko
AU - Chikyo, Toyohiro
AU - Ogura, Atsushi
N1 - Publisher Copyright:
© 2014 by The Electrochemical Society. All rights reserved.
PY - 2014
Y1 - 2014
N2 - In this paper we investigated transistor properties of indiumgallium- zinc oxide (IGZO) thin film transistors (TFT) with Al2O3/SiO2 dielectric. The saturation field-effect mobility (μsat) of TFTs with Al2O3 decreased about 10 % irrespective of the Al2O3 thickness. Furthermore, the threshold voltage (Vth) value of TFT with Al2O3 shifts toward positive direction about 0.5 V. We found that the SiO2/Al2O3 stack structure contains fixed charge of about - 1.1 × 1011 /cm2 and dipole moment of about 0.4 V at Al2O3/SiO2 interface, and negligible fixed charge in Al2O3 layer. These indicate that the origin of the μsat degradation and positive Vth shift are dominantly due to the fixed charge at IGZO/Al2O3 interface and dipole moment at Al2O3/SiO2 interface, respectively.
AB - In this paper we investigated transistor properties of indiumgallium- zinc oxide (IGZO) thin film transistors (TFT) with Al2O3/SiO2 dielectric. The saturation field-effect mobility (μsat) of TFTs with Al2O3 decreased about 10 % irrespective of the Al2O3 thickness. Furthermore, the threshold voltage (Vth) value of TFT with Al2O3 shifts toward positive direction about 0.5 V. We found that the SiO2/Al2O3 stack structure contains fixed charge of about - 1.1 × 1011 /cm2 and dipole moment of about 0.4 V at Al2O3/SiO2 interface, and negligible fixed charge in Al2O3 layer. These indicate that the origin of the μsat degradation and positive Vth shift are dominantly due to the fixed charge at IGZO/Al2O3 interface and dipole moment at Al2O3/SiO2 interface, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84925206432&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84925206432&partnerID=8YFLogxK
U2 - 10.1149/06104.0345ecst
DO - 10.1149/06104.0345ecst
M3 - Conference article
AN - SCOPUS:84925206432
VL - 61
SP - 345
EP - 351
JO - ECS Transactions
JF - ECS Transactions
SN - 1938-5862
IS - 4
T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting
Y2 - 11 May 2014 through 15 May 2014
ER -