Influence of Al2O3 gate dielectric on transistor properties for IGZO thin film transistor

Kazunori Kurishima; Toshihide Nabatame; Maki Shimizu; Shinya Aikawa; Kazuhito Tsukagoshi; Akihiko Ohi; Toyohiro Chikyo; Atsushi Ogura

doi:10.1149/06104.0345ecst

Influence of Al₂O₃ gate dielectric on transistor properties for IGZO thin film transistor

Kazunori Kurishima, Toshihide Nabatame, Maki Shimizu, Shinya Aikawa, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyo, Atsushi Ogura

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

In this paper we investigated transistor properties of indiumgallium- zinc oxide (IGZO) thin film transistors (TFT) with Al₂O₃/SiO₂ dielectric. The saturation field-effect mobility (μ_sat) of TFTs with Al₂O₃ decreased about 10 % irrespective of the Al₂O₃ thickness. Furthermore, the threshold voltage (V_th) value of TFT with Al2O3 shifts toward positive direction about 0.5 V. We found that the SiO₂/Al₂O₃ stack structure contains fixed charge of about - 1.1 × 10¹¹ /cm² and dipole moment of about 0.4 V at Al₂O₃/SiO₂ interface, and negligible fixed charge in Al₂O₃ layer. These indicate that the origin of the μ_sat degradation and positive Vth shift are dominantly due to the fixed charge at IGZO/Al₂O₃ interface and dipole moment at Al₂O₃/SiO₂ interface, respectively.

Original language	English
Pages (from-to)	345-351
Number of pages	7
Journal	ECS Transactions
Volume	61
Issue number	4
DOIs	https://doi.org/10.1149/06104.0345ecst
Publication status	Published - 2014
Externally published	Yes
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States Duration: 2014 May 11 → 2014 May 15

ASJC Scopus subject areas

Engineering(all)

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Influence of Al₂O₃ gate dielectric on transistor properties for IGZO thin film transistor. / Kurishima, Kazunori; Nabatame, Toshihide; Shimizu, Maki; Aikawa, Shinya; Tsukagoshi, Kazuhito; Ohi, Akihiko; Chikyo, Toyohiro; Ogura, Atsushi.

In: ECS Transactions, Vol. 61, No. 4, 2014, p. 345-351.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "In this paper we investigated transistor properties of indiumgallium- zinc oxide (IGZO) thin film transistors (TFT) with Al2O3/SiO2 dielectric. The saturation field-effect mobility (μsat) of TFTs with Al2O3 decreased about 10 % irrespective of the Al2O3 thickness. Furthermore, the threshold voltage (Vth) value of TFT with Al2O3 shifts toward positive direction about 0.5 V. We found that the SiO2/Al2O3 stack structure contains fixed charge of about - 1.1 × 1011 /cm2 and dipole moment of about 0.4 V at Al2O3/SiO2 interface, and negligible fixed charge in Al2O3 layer. These indicate that the origin of the μsat degradation and positive Vth shift are dominantly due to the fixed charge at IGZO/Al2O3 interface and dipole moment at Al2O3/SiO2 interface, respectively.",

author = "Kazunori Kurishima and Toshihide Nabatame and Maki Shimizu and Shinya Aikawa and Kazuhito Tsukagoshi and Akihiko Ohi and Toyohiro Chikyo and Atsushi Ogura",

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AU - Kurishima, Kazunori

AU - Nabatame, Toshihide

AU - Shimizu, Maki

AU - Aikawa, Shinya

AU - Tsukagoshi, Kazuhito

AU - Ohi, Akihiko

AU - Chikyo, Toyohiro

AU - Ogura, Atsushi

PY - 2014

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AB - In this paper we investigated transistor properties of indiumgallium- zinc oxide (IGZO) thin film transistors (TFT) with Al2O3/SiO2 dielectric. The saturation field-effect mobility (μsat) of TFTs with Al2O3 decreased about 10 % irrespective of the Al2O3 thickness. Furthermore, the threshold voltage (Vth) value of TFT with Al2O3 shifts toward positive direction about 0.5 V. We found that the SiO2/Al2O3 stack structure contains fixed charge of about - 1.1 × 1011 /cm2 and dipole moment of about 0.4 V at Al2O3/SiO2 interface, and negligible fixed charge in Al2O3 layer. These indicate that the origin of the μsat degradation and positive Vth shift are dominantly due to the fixed charge at IGZO/Al2O3 interface and dipole moment at Al2O3/SiO2 interface, respectively.

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