Influence of Al2O3 gate dielectric on transistor properties for IGZO thin film transistor

Kazunori Kurishima, Toshihide Nabatame, Maki Shimizu, Shinya Aikawa, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyo, Atsushi Ogura

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

In this paper we investigated transistor properties of indiumgallium- zinc oxide (IGZO) thin film transistors (TFT) with Al2O3/SiO2 dielectric. The saturation field-effect mobility (μsat) of TFTs with Al2O3 decreased about 10 % irrespective of the Al2O3 thickness. Furthermore, the threshold voltage (Vth) value of TFT with Al2O3 shifts toward positive direction about 0.5 V. We found that the SiO2/Al2O3 stack structure contains fixed charge of about - 1.1 × 1011 /cm2 and dipole moment of about 0.4 V at Al2O3/SiO2 interface, and negligible fixed charge in Al2O3 layer. These indicate that the origin of the μsat degradation and positive Vth shift are dominantly due to the fixed charge at IGZO/Al2O3 interface and dipole moment at Al2O3/SiO2 interface, respectively.

Original languageEnglish
Pages (from-to)345-351
Number of pages7
JournalECS Transactions
Volume61
Issue number4
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States
Duration: 2014 May 112014 May 15

ASJC Scopus subject areas

  • Engineering(all)

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    Kurishima, K., Nabatame, T., Shimizu, M., Aikawa, S., Tsukagoshi, K., Ohi, A., Chikyo, T., & Ogura, A. (2014). Influence of Al2O3 gate dielectric on transistor properties for IGZO thin film transistor. ECS Transactions, 61(4), 345-351. https://doi.org/10.1149/06104.0345ecst