Influence of air exposure time on bonding strength in Au-Au surface activated wafer bonding

Ken Okumura; Eiji Higurashi; Tadatomo Suga; Kei Hagiwara

doi:10.1109/ICEP-IAAC.2015.7111055

Influence of air exposure time on bonding strength in Au-Au surface activated wafer bonding

Ken Okumura, Eiji Higurashi, Tadatomo Suga, Kei Hagiwara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

In this paper, we investigated the influence of air exposure time after gold (Au) deposition on bonding strength in Au-Au bonding. Synthetic quartz glass wafers with smooth Au thin film (thickness: 30 nm, root mean square surface roughness: 0.43 nm) were successfully bonded in air at room temperature after argon radio frequency plasma activation process, even when they were exposed to air for a long term (800-2000 h) after Au deposition. High die-shear strength was obtained and the fractures typically occurred inside the bulk glass during die-shear test rather than at the bonded interface.

Original language	English
Title of host publication	ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	448-451
Number of pages	4
ISBN (Electronic)	9784904090138
DOIs	https://doi.org/10.1109/ICEP-IAAC.2015.7111055
Publication status	Published - 2015 May 20
Externally published	Yes
Event	2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 - Kyoto, Japan Duration: 2015 Apr 14 → 2015 Apr 17

Publication series

Name	ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference

Other

Other	2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
Country/Territory	Japan
City	Kyoto
Period	15/4/14 → 15/4/17

Keywords

Au-Au Bonding
Surface Activated Bonding

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICEP-IAAC.2015.7111055

Cite this

Okumura, K., Higurashi, E., Suga, T., & Hagiwara, K. (2015). Influence of air exposure time on bonding strength in Au-Au surface activated wafer bonding. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (pp. 448-451). [7111055] (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEP-IAAC.2015.7111055

Influence of air exposure time on bonding strength in Au-Au surface activated wafer bonding. / Okumura, Ken; Higurashi, Eiji; Suga, Tadatomo et al.

ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc., 2015. p. 448-451 7111055 (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Okumura, K, Higurashi, E, Suga, T & Hagiwara, K 2015, Influence of air exposure time on bonding strength in Au-Au surface activated wafer bonding. in ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference., 7111055, ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, Institute of Electrical and Electronics Engineers Inc., pp. 448-451, 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015, Kyoto, Japan, 15/4/14. https://doi.org/10.1109/ICEP-IAAC.2015.7111055

Okumura K, Higurashi E, Suga T, Hagiwara K. Influence of air exposure time on bonding strength in Au-Au surface activated wafer bonding. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc. 2015. p. 448-451. 7111055. (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference). doi: 10.1109/ICEP-IAAC.2015.7111055

Okumura, Ken ; Higurashi, Eiji ; Suga, Tadatomo et al. / Influence of air exposure time on bonding strength in Au-Au surface activated wafer bonding. ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 448-451 (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference).

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abstract = "In this paper, we investigated the influence of air exposure time after gold (Au) deposition on bonding strength in Au-Au bonding. Synthetic quartz glass wafers with smooth Au thin film (thickness: 30 nm, root mean square surface roughness: 0.43 nm) were successfully bonded in air at room temperature after argon radio frequency plasma activation process, even when they were exposed to air for a long term (800-2000 h) after Au deposition. High die-shear strength was obtained and the fractures typically occurred inside the bulk glass during die-shear test rather than at the bonded interface.",

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N2 - In this paper, we investigated the influence of air exposure time after gold (Au) deposition on bonding strength in Au-Au bonding. Synthetic quartz glass wafers with smooth Au thin film (thickness: 30 nm, root mean square surface roughness: 0.43 nm) were successfully bonded in air at room temperature after argon radio frequency plasma activation process, even when they were exposed to air for a long term (800-2000 h) after Au deposition. High die-shear strength was obtained and the fractures typically occurred inside the bulk glass during die-shear test rather than at the bonded interface.

AB - In this paper, we investigated the influence of air exposure time after gold (Au) deposition on bonding strength in Au-Au bonding. Synthetic quartz glass wafers with smooth Au thin film (thickness: 30 nm, root mean square surface roughness: 0.43 nm) were successfully bonded in air at room temperature after argon radio frequency plasma activation process, even when they were exposed to air for a long term (800-2000 h) after Au deposition. High die-shear strength was obtained and the fractures typically occurred inside the bulk glass during die-shear test rather than at the bonded interface.

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ER -

Influence of air exposure time on bonding strength in Au-Au surface activated wafer bonding

Abstract

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Keywords

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