Influence of a SiO 2 mask on the growth of semi-polar (11-22) GaN on patterned Si (311) substrates

Min Yang, Hyung Soo Ahn, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

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5 Citations (Scopus)


The selective growth of semi-polar (11-22) GaN layers on patterned Si (311) substrates was performed by using metal organic vapor phase epitaxy (MOVPE) without using a SiO 2 mask to decrease the density of crystal defects that may be caused by the existence of the mask material. We found that even without using a SiO 2 mask (11-22) GaN layers could be selectively grown on Si (111) facets when the mesa width of the patterned silicon substrates was smaller than 1 micrometer. Low temperature (7 K) cathodoluminescence (CL) measurement confirmed that the intensity of the emission peak arising from the crystal defect region was remarkably decreased by the use of a maskless selective growth method. Low-temperature CL measurements were also performed on InGaN multiple-quantum-well (MQW) structures grown on (11-22) GaN templates. From the CL spectra, we could observe that the InGaN MQW structure grown on a (11-22) GaN template, which was selectively grown without a SiO 2 mask, had fewer crystal defects than that grown on a (11-22) GaN template formed by using the conventional selective growth method.

Original languageEnglish
Pages (from-to)2363-2366
Number of pages4
JournalJournal of the Korean Physical Society
Issue number6
Publication statusPublished - 2009 Jun 1


  • Cathodoluminescence
  • GaN
  • Selective growth
  • Semi-polar
  • Si

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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