Influence of 1 nm-thick structural `strained-layer' near SiO2/Si interface on sub-4 nm-thick gate oxide reliability

Koji Eriguchi, Yoshinao Harada, Masaaki Niwa

Research output: Contribution to journalConference article

32 Citations (Scopus)

Abstract

The relationship between the structural property and the electrical characteristics of thin SiO2 below 4 nm is investigated. The structural `strained-layer' near SiO2/Si interface is confirmed to affect strongly the TDDB (Time Dependent Dielectric Breakdown) lifetime of the thin gate oxides. The increase of the built-in compressive strain analyzed by the XPS (X-ray Photoelectron Spectroscopy)-based technique is experimentally found to decrease the TDDB lifetime.

Original languageEnglish
Pages (from-to)175-178
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1998 Dec 61998 Dec 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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