Influence of 1 nm-thick structural `strained-layer' near SiO2/Si interface on sub-4 nm-thick gate oxide reliability

Koji Eriguchi; Yoshinao Harada; Masaaki Niwa

Influence of 1 nm-thick structural `strained-layer' near SiO₂/Si interface on sub-4 nm-thick gate oxide reliability

Koji Eriguchi, Yoshinao Harada, Masaaki Niwa

Research output: Contribution to journal › Conference article › peer-review

Abstract

The relationship between the structural property and the electrical characteristics of thin SiO₂ below 4 nm is investigated. The structural `strained-layer' near SiO₂/Si interface is confirmed to affect strongly the TDDB (Time Dependent Dielectric Breakdown) lifetime of the thin gate oxides. The increase of the built-in compressive strain analyzed by the XPS (X-ray Photoelectron Spectroscopy)-based technique is experimentally found to decrease the TDDB lifetime.

Original language	English
Pages (from-to)	175-178
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1998 Dec 1
Externally published	Yes
Event	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1998 Dec 6 → 1998 Dec 9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Influence of 1 nm-thick structural `strained-layer' near SiO2/Si interface on sub-4 nm-thick gate oxide reliability",

abstract = "The relationship between the structural property and the electrical characteristics of thin SiO2 below 4 nm is investigated. The structural `strained-layer' near SiO2/Si interface is confirmed to affect strongly the TDDB (Time Dependent Dielectric Breakdown) lifetime of the thin gate oxides. The increase of the built-in compressive strain analyzed by the XPS (X-ray Photoelectron Spectroscopy)-based technique is experimentally found to decrease the TDDB lifetime.",

author = "Koji Eriguchi and Yoshinao Harada and Masaaki Niwa",

year = "1998",

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language = "English",

pages = "175--178",

journal = "Technical Digest - International Electron Devices Meeting",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

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T1 - Influence of 1 nm-thick structural `strained-layer' near SiO2/Si interface on sub-4 nm-thick gate oxide reliability

AU - Eriguchi, Koji

AU - Harada, Yoshinao

AU - Niwa, Masaaki

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The relationship between the structural property and the electrical characteristics of thin SiO2 below 4 nm is investigated. The structural `strained-layer' near SiO2/Si interface is confirmed to affect strongly the TDDB (Time Dependent Dielectric Breakdown) lifetime of the thin gate oxides. The increase of the built-in compressive strain analyzed by the XPS (X-ray Photoelectron Spectroscopy)-based technique is experimentally found to decrease the TDDB lifetime.

AB - The relationship between the structural property and the electrical characteristics of thin SiO2 below 4 nm is investigated. The structural `strained-layer' near SiO2/Si interface is confirmed to affect strongly the TDDB (Time Dependent Dielectric Breakdown) lifetime of the thin gate oxides. The increase of the built-in compressive strain analyzed by the XPS (X-ray Photoelectron Spectroscopy)-based technique is experimentally found to decrease the TDDB lifetime.

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UR - http://www.scopus.com/inward/citedby.url?scp=0032254780&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032254780

SP - 175

EP - 178

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

Influence of 1 nm-thick structural `strained-layer' near SiO2/Si interface on sub-4 nm-thick gate oxide reliability

Abstract

ASJC Scopus subject areas

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Influence of 1 nm-thick structural `strained-layer' near SiO₂/Si interface on sub-4 nm-thick gate oxide reliability