Abstract
The relationship between the structural property and the electrical characteristics of thin SiO2 below 4 nm is investigated. The structural `strained-layer' near SiO2/Si interface is confirmed to affect strongly the TDDB (Time Dependent Dielectric Breakdown) lifetime of the thin gate oxides. The increase of the built-in compressive strain analyzed by the XPS (X-ray Photoelectron Spectroscopy)-based technique is experimentally found to decrease the TDDB lifetime.
| Original language | English |
|---|---|
| Pages (from-to) | 175-178 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 1998 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1998 Dec 6 → 1998 Dec 9 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Cite this
Eriguchi, K., Harada, Y., & Niwa, M. (1998). Influence of 1 nm-thick structural `strained-layer' near SiO2/Si interface on sub-4 nm-thick gate oxide reliability. Technical Digest - International Electron Devices Meeting, 175-178.