Induced uniaxial magnetic anisotropy field in very thin NiFe and CoZrNb films

H. Katada, T. Shimatsu, I. Watanabe, H. Muraoka, Y. Sugita, Y. Nakamura

Research output: Contribution to journalConference article

22 Citations (Scopus)

Abstract

The induced uniaxial anisotropy field in thin permalloy and CoZrNb films was investigated. The value of the induced anisotropy field Hk of permalloy films of 77-81 at%Ni concentration was found to decrease as the film thickness decreased below 20 nm, even after annealing procedure in a magnetic field. The value of Hk at 3 nm was found to be nearly half that at 20 nm. A series of CoZrNb amorphous films showed a qualitatively similar thickness dependence of Hk. Moreover, a similar reduction of Hk was observed at 77 K. On the other hand, the easy axis of Ni79Fe21 films thinner than 20 nm was switched to the field direction by annealing with a magnetic field perpendicular to the easy axis of the as-deposited films, even at a low annealing temperature of 160°C. The absolute value of Hk in the 3 nm film after annealing at 160°C was nearly as large as in the as-deposited film. It is likely that the rearrangement of atom pairs can easily occur in the surface region, resulting in the switching of the easy axis to the annealing field direction in very thin films.

Original languageEnglish
Pages (from-to)2905-2908
Number of pages4
JournalIEEE Transactions on Magnetics
Volume36
Issue number5 I
DOIs
Publication statusPublished - 2000 Sep 1
Event2000 International Magnetics Conference (INTERMAG 2000) - Toronto, Ont, Canada
Duration: 2000 Apr 92000 Apr 12

Keywords

  • Easy axis of magnetization
  • Induced uniaxial anisotropy field
  • Very thin CoZrNb amorphous film
  • Very thin permalloy film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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