Individual cell measuring method for FeRAM retention testing

N. Tanabe, H. Koike, T. Miwa, J. Yamada, A. Seike, N. Kasai, H. Toyoshima, H. Hada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We propose a new testing methodology to predict the failure rate for long-term data retention of FeRAM chips. The individual retention time limit for each memory cell is determined by measuring the retention time dependence on the read signal voltage using a novel test system. From this experiment, we found that the retention time limit of each memory cell obeys a Gaussian distribution. We applied this method to the evaluation of 16 kbit FeRAM test chips, and successfully predicted the failure rates for long-term data retention time as the functions of temperature and writing voltage.

Original languageEnglish
Title of host publication2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages23-27
Number of pages5
ISBN (Electronic)0780365879
DOIs
Publication statusPublished - 2001 Jan 1
Externally publishedYes
Event39th Annual IEEE International Reliability Physics Symposium, IRPS 2001 - Orlando, United States
Duration: 2001 Apr 302001 May 3

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2001-January
ISSN (Print)1541-7026

Other

Other39th Annual IEEE International Reliability Physics Symposium, IRPS 2001
CountryUnited States
CityOrlando
Period01/4/3001/5/3

Keywords

  • Ferroelectric films
  • Gaussian distribution
  • Nonvolatile memory
  • Random access memory
  • Semiconductor device measurement
  • System testing
  • Temperature
  • Time measurement
  • Voltage
  • Writing

ASJC Scopus subject areas

  • Engineering(all)

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