Individual cell measuring method for FeRAM retention testing

N. Tanabe, H. Koike, T. Miwa, J. Yamada, A. Seike, N. Kasai, H. Toyoshima, H. Hada

Research output: Contribution to journalConference articlepeer-review

Abstract

We propose a new testing methodology to predict the failure rate for long-term data retention of FeRAM chips. The individual retention time limit for each memory cell is determined by measuring the retention time dependence on the read signal voltage using our novel test system. From this experiment, we found that the retention time limit of each memory cell obey the Gaussian distribution. We applied this method to the evaluation of 16 Kbit FeRAM test chip, and successfully predicted the failure rates for long-term data retention time as the functions of temperature and writing voltage.

Original languageEnglish
Pages (from-to)23-27
Number of pages5
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 2001 Jan 1
Externally publishedYes
Event39th Annual International Reliability Physics Symposium - Orlando, FL, United States
Duration: 2001 Apr 302001 May 3

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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