Indium-rich 4x2 reconstruction in novel growth of InAs on the GaAs(001)

Qi Kun Xue, Yukio Hasegawa, Tsuyoshi Ogino, Hisashi Kiyama, Toshio Sakurai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Molecular beam epitaxy (MBE) of the lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED). We found that deposition of submonolayer (∼0.6ML) In on the GaAs(001)-As-rich 2x4-β surface could result in a new 4x2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs grows two-dimensionally and the commonly observed three-dimensional islanding is completely surpressed. The atomic structure for this new 4x2 reconstruction is discussed on the basis of voltage-dependent STM images. In addition, a "domain wall" structure is discussed, representing a new type of strain relief mechanism in the layer-by-layer growth reported here.

Original languageEnglish
Pages (from-to)153-156
Number of pages4
JournalScience Reports of the Rerearch Institutes Tohoku University Series A-Physics
Volume44
Issue number2
Publication statusPublished - 1997 Mar
Externally publishedYes

Keywords

  • GaAs
  • Heterojunction
  • InAs
  • Molecular beam epitaxy
  • Scanning tunneling microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Metals and Alloys

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