Indium-rich 4x2 reconstruction in novel growth of InAs on the GaAs(001)

Qi Kun Xue; Yukio Hasegawa; Tsuyoshi Ogino; Hisashi Kiyama; Toshio Sakurai

Indium-rich 4x2 reconstruction in novel growth of InAs on the GaAs(001)

Qi Kun Xue, Yukio Hasegawa, Tsuyoshi Ogino, Hisashi Kiyama, Toshio Sakurai

Research output: Contribution to journal › Article › peer-review

Abstract

Molecular beam epitaxy (MBE) of the lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED). We found that deposition of submonolayer (∼0.6ML) In on the GaAs(001)-As-rich 2x4-β surface could result in a new 4x2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs grows two-dimensionally and the commonly observed three-dimensional islanding is completely surpressed. The atomic structure for this new 4x2 reconstruction is discussed on the basis of voltage-dependent STM images. In addition, a "domain wall" structure is discussed, representing a new type of strain relief mechanism in the layer-by-layer growth reported here.

Original language	English
Pages (from-to)	153-156
Number of pages	4
Journal	Science Reports of the Rerearch Institutes Tohoku University Series A-Physics
Volume	44
Issue number	2
Publication status	Published - 1997 Mar
Externally published	Yes

Keywords

GaAs
Heterojunction
InAs
Molecular beam epitaxy
Scanning tunneling microscopy

ASJC Scopus subject areas

Condensed Matter Physics
Metals and Alloys

Cite this

@article{e4b6830dbb4f4448af1d97a42d16deac,

title = "Indium-rich 4x2 reconstruction in novel growth of InAs on the GaAs(001)",

abstract = "Molecular beam epitaxy (MBE) of the lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED). We found that deposition of submonolayer (∼0.6ML) In on the GaAs(001)-As-rich 2x4-β surface could result in a new 4x2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs grows two-dimensionally and the commonly observed three-dimensional islanding is completely surpressed. The atomic structure for this new 4x2 reconstruction is discussed on the basis of voltage-dependent STM images. In addition, a {"}domain wall{"} structure is discussed, representing a new type of strain relief mechanism in the layer-by-layer growth reported here.",

keywords = "GaAs, Heterojunction, InAs, Molecular beam epitaxy, Scanning tunneling microscopy",

author = "Xue, {Qi Kun} and Yukio Hasegawa and Tsuyoshi Ogino and Hisashi Kiyama and Toshio Sakurai",

year = "1997",

month = mar,

language = "English",

volume = "44",

pages = "153--156",

journal = "Science Reports of the Rerearch Institutes Tohoku University Series A-Physics",

issn = "0040-8808",

publisher = "Tohoku University",

number = "2",

}

TY - JOUR

T1 - Indium-rich 4x2 reconstruction in novel growth of InAs on the GaAs(001)

AU - Xue, Qi Kun

AU - Hasegawa, Yukio

AU - Ogino, Tsuyoshi

AU - Kiyama, Hisashi

AU - Sakurai, Toshio

PY - 1997/3

Y1 - 1997/3

N2 - Molecular beam epitaxy (MBE) of the lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED). We found that deposition of submonolayer (∼0.6ML) In on the GaAs(001)-As-rich 2x4-β surface could result in a new 4x2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs grows two-dimensionally and the commonly observed three-dimensional islanding is completely surpressed. The atomic structure for this new 4x2 reconstruction is discussed on the basis of voltage-dependent STM images. In addition, a "domain wall" structure is discussed, representing a new type of strain relief mechanism in the layer-by-layer growth reported here.

AB - Molecular beam epitaxy (MBE) of the lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED). We found that deposition of submonolayer (∼0.6ML) In on the GaAs(001)-As-rich 2x4-β surface could result in a new 4x2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs grows two-dimensionally and the commonly observed three-dimensional islanding is completely surpressed. The atomic structure for this new 4x2 reconstruction is discussed on the basis of voltage-dependent STM images. In addition, a "domain wall" structure is discussed, representing a new type of strain relief mechanism in the layer-by-layer growth reported here.

KW - GaAs

KW - Heterojunction

KW - InAs

KW - Molecular beam epitaxy

KW - Scanning tunneling microscopy

UR - http://www.scopus.com/inward/record.url?scp=33748813233&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748813233&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33748813233

VL - 44

SP - 153

EP - 156

JO - Science Reports of the Rerearch Institutes Tohoku University Series A-Physics

JF - Science Reports of the Rerearch Institutes Tohoku University Series A-Physics

SN - 0040-8808

IS - 2

ER -

Indium-rich 4x2 reconstruction in novel growth of InAs on the GaAs(001)

Abstract

Keywords

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this