Abstract
Molecular beam epitaxy (MBE) of the lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED). We found that deposition of submonolayer (∼0.6ML) In on the GaAs(001)-As-rich 2x4-β surface could result in a new 4x2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs grows two-dimensionally and the commonly observed three-dimensional islanding is completely surpressed. The atomic structure for this new 4x2 reconstruction is discussed on the basis of voltage-dependent STM images. In addition, a "domain wall" structure is discussed, representing a new type of strain relief mechanism in the layer-by-layer growth reported here.
Original language | English |
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Pages (from-to) | 153-156 |
Number of pages | 4 |
Journal | Science Reports of the Rerearch Institutes Tohoku University Series A-Physics |
Volume | 44 |
Issue number | 2 |
Publication status | Published - 1997 Mar |
Externally published | Yes |
Keywords
- GaAs
- Heterojunction
- InAs
- Molecular beam epitaxy
- Scanning tunneling microscopy
ASJC Scopus subject areas
- Condensed Matter Physics
- Metals and Alloys