Indium composition dependent threshold current density in strained InGaAs/AIGaAs quantum well lasers

M. Sugimoto; N. Hamao; K. Nishi; H. Yokoyama

doi:10.1109/LEOS.1990.690707

Indium composition dependent threshold current density in strained InGaAs/AIGaAs quantum well lasers

M. Sugimoto, N. Hamao, K. Nishi, H. Yokoyama

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Indium Composition Dependence of Jth GaAs QW In0.15Ga0.85As QW Jth=182A/Cm2= 115A/Cm2 (L=500um) at y=950nm Jth reduction mechanism Crystal quality = nonradiative carrier lifetime tnr improvement (x0.15) 10% reduction. Other possibilities Modification of band-structure Jth data are consistent with simulation = mhh change?.

Original language	English
Title of host publication	LEOS 1990 - IEEE Lasers and Electro-Optics Society Annual Meeting, Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	635-636
Number of pages	2
ISBN (Electronic)	0879425504
DOIs	https://doi.org/10.1109/LEOS.1990.690707
Publication status	Published - 1990
Externally published	Yes
Event	3rd IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1990 - Boston, United States Duration: 1990 Nov 4 → 1990 Nov 9

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1990-November
ISSN (Print)	1092-8081

Conference

Conference	3rd IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1990
Country/Territory	United States
City	Boston
Period	90/11/4 → 90/11/9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LEOS.1990.690707

Cite this

Sugimoto, M., Hamao, N., Nishi, K., & Yokoyama, H. (1990). Indium composition dependent threshold current density in strained InGaAs/AIGaAs quantum well lasers. In LEOS 1990 - IEEE Lasers and Electro-Optics Society Annual Meeting, Conference Proceedings (pp. 635-636). [690707] (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 1990-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LEOS.1990.690707

Indium composition dependent threshold current density in strained InGaAs/AIGaAs quantum well lasers. / Sugimoto, M.; Hamao, N.; Nishi, K.; Yokoyama, H.

LEOS 1990 - IEEE Lasers and Electro-Optics Society Annual Meeting, Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 1990. p. 635-636 690707 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 1990-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sugimoto, M, Hamao, N, Nishi, K & Yokoyama, H 1990, Indium composition dependent threshold current density in strained InGaAs/AIGaAs quantum well lasers. in LEOS 1990 - IEEE Lasers and Electro-Optics Society Annual Meeting, Conference Proceedings., 690707, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 1990-November, Institute of Electrical and Electronics Engineers Inc., pp. 635-636, 3rd IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1990, Boston, United States, 90/11/4. https://doi.org/10.1109/LEOS.1990.690707

Sugimoto M, Hamao N, Nishi K, Yokoyama H. Indium composition dependent threshold current density in strained InGaAs/AIGaAs quantum well lasers. In LEOS 1990 - IEEE Lasers and Electro-Optics Society Annual Meeting, Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 1990. p. 635-636. 690707. (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). https://doi.org/10.1109/LEOS.1990.690707

Sugimoto, M. ; Hamao, N. ; Nishi, K. ; Yokoyama, H. / Indium composition dependent threshold current density in strained InGaAs/AIGaAs quantum well lasers. LEOS 1990 - IEEE Lasers and Electro-Optics Society Annual Meeting, Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 1990. pp. 635-636 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS).

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abstract = "Indium Composition Dependence of Jth GaAs QW In0.15Ga0.85As QW Jth=182A/Cm2= 115A/Cm2 (L=500um) at y=950nm Jth reduction mechanism Crystal quality = nonradiative carrier lifetime tnr improvement (x0.15) 10% reduction. Other possibilities Modification of band-structure Jth data are consistent with simulation = mhh change?.",

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Indium composition dependent threshold current density in strained InGaAs/AIGaAs quantum well lasers

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