TY - GEN
T1 - Indium composition dependent threshold current density in strained InGaAs/AIGaAs quantum well lasers
AU - Sugimoto, M.
AU - Hamao, N.
AU - Nishi, K.
AU - Yokoyama, H.
PY - 1990/1/1
Y1 - 1990/1/1
N2 - Indium Composition Dependence of Jth GaAs QW In0.15Ga0.85As QW Jth=182A/Cm2= 115A/Cm2 (L=500um) at y=950nm Jth reduction mechanism Crystal quality = nonradiative carrier lifetime tnr improvement (x0.15) 10% reduction. Other possibilities Modification of band-structure Jth data are consistent with simulation = mhh change?.
AB - Indium Composition Dependence of Jth GaAs QW In0.15Ga0.85As QW Jth=182A/Cm2= 115A/Cm2 (L=500um) at y=950nm Jth reduction mechanism Crystal quality = nonradiative carrier lifetime tnr improvement (x0.15) 10% reduction. Other possibilities Modification of band-structure Jth data are consistent with simulation = mhh change?.
UR - http://www.scopus.com/inward/record.url?scp=85066885303&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85066885303&partnerID=8YFLogxK
U2 - 10.1109/LEOS.1990.690707
DO - 10.1109/LEOS.1990.690707
M3 - Conference contribution
AN - SCOPUS:85066885303
T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
SP - 635
EP - 636
BT - LEOS 1990 - IEEE Lasers and Electro-Optics Society Annual Meeting, Conference Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 3rd IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1990
Y2 - 4 November 1990 through 9 November 1990
ER -