Indium composition dependent threshold current density in strained InGaAs/AIGaAs quantum well lasers

M. Sugimoto, N. Hamao, K. Nishi, H. Yokoyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Indium Composition Dependence of Jth GaAs QW In0.15Ga0.85As QW Jth=182A/Cm2= 115A/Cm2 (L=500um) at y=950nm Jth reduction mechanism Crystal quality = nonradiative carrier lifetime tnr improvement (x0.15) 10% reduction. Other possibilities Modification of band-structure Jth data are consistent with simulation = mhh change?.

Original languageEnglish
Title of host publicationLEOS 1990 - IEEE Lasers and Electro-Optics Society Annual Meeting, Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages635-636
Number of pages2
ISBN (Electronic)0879425504
DOIs
Publication statusPublished - 1990 Jan 1
Externally publishedYes
Event3rd IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1990 - Boston, United States
Duration: 1990 Nov 41990 Nov 9

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1990-November
ISSN (Print)1092-8081

Conference

Conference3rd IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1990
CountryUnited States
CityBoston
Period90/11/490/11/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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