Indium composition dependent threshold current density in strained ingaas/algaas quantum well lasers

Mitsunori Sugimoto, Noboru Hamao, Hiroyuki Yokoyama, Kenichi Nishi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The dependence of threshold current density on indium composition in strained InGaAs/AlGaAs quantum well lasers is examined. A threshold current density (/th) as low as 115 A/cm2 is obtained in a chip with a 500 /un long cavity at a lasing wavelength of 950 nm. The Jth for a strained InGaAs QW was found to be 35% less than that for a GaAs QW laser with the same cavity length. Time resolved photoluminescence measurement revealed that the improvement in the nonradiative carrier lifetime for quantum wells with higher indium composition was limited to a Jth improvement of only 10%. Calculation suggests that the most likely reason for the major portion of the 7th improvement is gain enhancement due to a reduction in heavy hole mass.

Original languageEnglish
Pages (from-to)L2098-L2100
JournalJapanese journal of applied physics
Volume30
Issue number12B
DOIs
Publication statusPublished - 1991 Dec
Externally publishedYes

Keywords

  • AlGaAs
  • InGaAs
  • Molecular beam epitaxy
  • Quantum well laser
  • Threshold current density

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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