We present the measurements of the superconductor-insulator transition (SIT) driven by both thickness and magnetic field for the Si/a-W/Si system. The thickness of the W-film was varied over a range from 1 to 5 nm. We found the universal quantum sheet resistance at SIT driven by thickness. Field induced SIT for two samples with 1.6 and 3 nm W thick was investigated in detail. In the insulator side, the evidence of Bose glass state for our homogeneous disordered two dimensional system is inferred by comparing SIT field Bc with the upper critical field at 0 K Hc2(0) estimated from measurements of dHc2/dT\Tc and the field dependent magneto-resistance at various temperatures.
- Bose glass
- Superconductor-insulator transition
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering