Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction

Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Meishoku Masahara, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

An Independent-gate four-terminal FinFET SRAM have been successfully fabricated for drastic leakage current reduction. The new SRAM is consisted of a four-terminal (4T-) FinFET which has a flexible Vth controllability. The 4T-FInFET with a TIN metal gate is fabricated by a newly developed gate separation etching process. By appropriately controlling the Vth of the 4T-FInFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM cell.

Original languageEnglish
Title of host publicationProceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
Pages63-66
Number of pages4
DOIs
Publication statusPublished - 2008 Sep 22
Externally publishedYes
EventIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 - Minatec Grenoble, France
Duration: 2008 Jun 22008 Jun 4

Publication series

NameProceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Other

OtherIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008
CountryFrance
CityMinatec Grenoble
Period08/6/208/6/4

Keywords

  • FinFET
  • Leakage current
  • SRAM
  • Separated gate

ASJC Scopus subject areas

  • Human-Computer Interaction
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction'. Together they form a unique fingerprint.

  • Cite this

    Endo, K., O'uchi, S. I., Ishikawa, Y., Liu, Y., Matsukawa, T., Sakamoto, K., Masahara, M., Tsukada, J., Ishii, K., Yamauchi, H., & Suzuki, E. (2008). Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 63-66). [4567247] (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). https://doi.org/10.1109/ICICDT.2008.4567247