Multi-Gate device technology is the promising candidate for the enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double- gate devices have been proposed to achieve flexible Vth adjustment. It is revealed that the SRAM noise margins have been increased by introducing the independent-double-gate FinFET.
- Multi-gate devices
- Noise margin
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering