Independent-double-gate FinFET SRAM technology

Kazuhiko Endo, Shin Ichi Ouchi, Takashi Matsukawa, Yongxun Liu, Meishoku Masahara

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Multi-Gate device technology is the promising candidate for the enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double- gate devices have been proposed to achieve flexible Vth adjustment. It is revealed that the SRAM noise margins have been increased by introducing the independent-double-gate FinFET.

Original languageEnglish
Pages (from-to)413-423
Number of pages11
JournalIEICE Transactions on Electronics
VolumeE96-C
Issue number4
DOIs
Publication statusPublished - 2013 Apr
Externally publishedYes

Keywords

  • FinFET
  • Multi-gate devices
  • Noise margin
  • SRAM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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