Independent-double-gate FinFET SRAM technology

K. Endo, S. O'Uchi, T. Matsukawa, Y. Liu, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Double-gate (DG) device technology has been proposed and investigated for many years. However, there are many issues due to the aggressively scaled feature size. Variability of the device due to the various random sources is increasing and will reduce the yield of the circuit. This paper present the variability issues in the scaled FinFET. Also, we focus on the Vth controllable independent DG technology to enhance circuit performance.

Original languageEnglish
Title of host publicationDielectric Materials and Metals for Nanoelectronics and Photonics 10
Pages193-199
Number of pages7
Edition4
DOIs
Publication statusPublished - 2012 Dec 1
Externally publishedYes
EventSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Publication series

NameECS Transactions
Number4
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • Engineering(all)

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