Independent double-gate FinFET SRAM technology

Kazuhiko Endo, Shi Ichi O'Uchi, Takashi Matsukawa, Yongxun Liu, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Independent-double-gate (IDG) FinFET SRAM technology has been developed. Vth controllable IDG-FinFET technology enables noise margin enhancement of SRAM cells. The IDG-FinFET is also effective for the reduction of variation effect due to the work function variation (WFV) of the TiN metal-gate.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
Publication statusPublished - 2011 Sep 26
Externally publishedYes
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan, Province of China
Duration: 2011 Jun 212011 Jun 24

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan, Province of China
CityTao-Yuan
Period11/6/2111/6/24

Keywords

  • Double-gate
  • FinFET
  • SRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Endo, K., O'Uchi, S. I., Matsukawa, T., Liu, Y., & Masahara, M. (2011). Independent double-gate FinFET SRAM technology. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991796] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991796