An independent-double-gate (IDG) fin-type MOSFET (FinFET) SRAM has been successfully fabricated with considerable leakage current reduction. The new SRAM consists of IDG-FinFETs which have flexible Vth controllability. The IDG-FinFET with a TiN metal gate is fabricated by a newly developed gate-separation etching process. By appropriately controlling the Vth of the IDG-FinFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM circuitry.
- Fin-type MOSFET (FinFET)
- Independent double gate (IDG)
- Leakage current
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering