Independent-double-gate FinFET SRAM for leakage current reduction

Kazuhiko Endo; Shin Ichi O'uchi; Yuki Ishikawa; Yongxun Liu; Takashi Matsukawa; Kunihiro Sakamoto; Meishoku Masahara; Junichi Tsukada; Kenichi Ishii; Hiromi Yamauchi; Eiichi Suzuki

doi:10.1109/LED.2009.2021075

Independent-double-gate FinFET SRAM for leakage current reduction

Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Meishoku Masahara, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

An independent-double-gate (IDG) fin-type MOSFET (FinFET) SRAM has been successfully fabricated with considerable leakage current reduction. The new SRAM consists of IDG-FinFETs which have flexible V_th controllability. The IDG-FinFET with a TiN metal gate is fabricated by a newly developed gate-separation etching process. By appropriately controlling the V_th of the IDG-FinFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM circuitry.

Original language	English
Pages (from-to)	757-759
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	7
DOIs	https://doi.org/10.1109/LED.2009.2021075
Publication status	Published - 2009
Externally published	Yes

Keywords

Fin-type MOSFET (FinFET)
Independent double gate (IDG)
Leakage current
SRAM

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2021075

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@article{795978dfcf2f4745b44737172a74711f,

title = "Independent-double-gate FinFET SRAM for leakage current reduction",

abstract = "An independent-double-gate (IDG) fin-type MOSFET (FinFET) SRAM has been successfully fabricated with considerable leakage current reduction. The new SRAM consists of IDG-FinFETs which have flexible Vth controllability. The IDG-FinFET with a TiN metal gate is fabricated by a newly developed gate-separation etching process. By appropriately controlling the Vth of the IDG-FinFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM circuitry.",

keywords = "Fin-type MOSFET (FinFET), Independent double gate (IDG), Leakage current, SRAM",

author = "Kazuhiko Endo and O'uchi, {Shin Ichi} and Yuki Ishikawa and Yongxun Liu and Takashi Matsukawa and Kunihiro Sakamoto and Meishoku Masahara and Junichi Tsukada and Kenichi Ishii and Hiromi Yamauchi and Eiichi Suzuki",

note = "Funding Information: Manuscript received November 27, 2008; revised April 2, 2009. First published May 15, 2009; current version published June 26, 2009. This work was supported in part by the Innovative Research Project on Nanoelectronics Materials and Structures from the Ministry of Economy, Trade and Industry, Japan. The review of this letter was arranged by Editor K. De Meyer.",

year = "2009",

doi = "10.1109/LED.2009.2021075",

language = "English",

volume = "30",

pages = "757--759",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Independent-double-gate FinFET SRAM for leakage current reduction

AU - Endo, Kazuhiko

AU - O'uchi, Shin Ichi

AU - Ishikawa, Yuki

AU - Liu, Yongxun

AU - Matsukawa, Takashi

AU - Sakamoto, Kunihiro

AU - Masahara, Meishoku

AU - Tsukada, Junichi

AU - Ishii, Kenichi

AU - Yamauchi, Hiromi

AU - Suzuki, Eiichi

N1 - Funding Information: Manuscript received November 27, 2008; revised April 2, 2009. First published May 15, 2009; current version published June 26, 2009. This work was supported in part by the Innovative Research Project on Nanoelectronics Materials and Structures from the Ministry of Economy, Trade and Industry, Japan. The review of this letter was arranged by Editor K. De Meyer.

PY - 2009

Y1 - 2009

N2 - An independent-double-gate (IDG) fin-type MOSFET (FinFET) SRAM has been successfully fabricated with considerable leakage current reduction. The new SRAM consists of IDG-FinFETs which have flexible Vth controllability. The IDG-FinFET with a TiN metal gate is fabricated by a newly developed gate-separation etching process. By appropriately controlling the Vth of the IDG-FinFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM circuitry.

AB - An independent-double-gate (IDG) fin-type MOSFET (FinFET) SRAM has been successfully fabricated with considerable leakage current reduction. The new SRAM consists of IDG-FinFETs which have flexible Vth controllability. The IDG-FinFET with a TiN metal gate is fabricated by a newly developed gate-separation etching process. By appropriately controlling the Vth of the IDG-FinFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM circuitry.

KW - Fin-type MOSFET (FinFET)

KW - Independent double gate (IDG)

KW - Leakage current

KW - SRAM

UR - http://www.scopus.com/inward/record.url?scp=67650441500&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650441500&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2021075

DO - 10.1109/LED.2009.2021075

M3 - Article

AN - SCOPUS:67650441500

SN - 0741-3106

VL - 30

SP - 757

EP - 759

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

ER -

Independent-double-gate FinFET SRAM for leakage current reduction

Abstract

Keywords

ASJC Scopus subject areas

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