Independent-double-gate FinFET SRAM for leakage current reduction

Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Meishoku Masahara, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

An independent-double-gate (IDG) fin-type MOSFET (FinFET) SRAM has been successfully fabricated with considerable leakage current reduction. The new SRAM consists of IDG-FinFETs which have flexible Vth controllability. The IDG-FinFET with a TiN metal gate is fabricated by a newly developed gate-separation etching process. By appropriately controlling the Vth of the IDG-FinFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM circuitry.

Original languageEnglish
Pages (from-to)757-759
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number7
DOIs
Publication statusPublished - 2009 Jun 8
Externally publishedYes

Keywords

  • Fin-type MOSFET (FinFET)
  • Independent double gate (IDG)
  • Leakage current
  • SRAM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Endo, K., O'uchi, S. I., Ishikawa, Y., Liu, Y., Matsukawa, T., Sakamoto, K., Masahara, M., Tsukada, J., Ishii, K., Yamauchi, H., & Suzuki, E. (2009). Independent-double-gate FinFET SRAM for leakage current reduction. IEEE Electron Device Letters, 30(7), 757-759. https://doi.org/10.1109/LED.2009.2021075