Independent-double-gate FINFET SRAM cell for drastic leakage current reduction

Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Meishoku Masahara, Junichi Tsukada, Kenichi Ishii, Eiichi Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

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Engineering & Materials Science