Independent degrees of freedom in two-dimensional materials

Sake Wang, F. R. Pratama, M. Shoufie Ukhtary, Riichiro Saito

Research output: Contribution to journalArticlepeer-review

49 Citations (Scopus)


In hexagonal two-dimensional (2D) materials such as graphene, hexagonal boron nitride, or transition metal dichalcogenides, electrons possess intrinsic degrees of freedom (DOFs): Sublattice pseudospin, spin, and valley. Independent polarization of the DOFs for carrying information can be harnessed in future semiconductor industry. Here we propose a general Hamiltonian based on the Haldane model with spin-orbit coupling (SOC) which realizes the independence of all the DOFs that can tune optical absorption spectra as a function of the SOC. The present result suggests a new 2D material or a new 2D electronic device which offers any combination of pseudospintronics, spintronics, and valleytronics applications.

Original languageEnglish
Article number081414
JournalPhysical Review B
Issue number8
Publication statusPublished - 2020 Feb 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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