Incubation-free growth of polycrystalline Si films by plasma-enhanced chemical vapor deposition using pulsed discharge under near atmospheric pressure

Hirotatsu Kitabatake, Maki Suemitsu, Hiroya Kitahata, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

By using the plasma-enhanced chemical vapor deposition (PE-CVD) under near-atmospheric pressures, we have achieved a high rate growth, 1 nm/s, of polycrystalline Si films on glass substrates without incubation layers for the first time. We have employed a short-pulse based system for a stable operation of discharge at atmospheric pressures without inert gas dilution. This feature enabled us to employ an extremely high dilution of monosilane by hydrogen, which should be the origin of the incubation-free growth of our films, in addition to the basic advantage for the high rate growth inherent in atmospheric reaction systems. The films are mainly consisted of polycrystalline Si with grain size ranging from 5 nm to above 10nm, as observed by Raman scattering, X-ray diffractions and cross sectional transmission electron microscopy.

Original languageEnglish
Pages (from-to)L683-L686
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number20-23
DOIs
Publication statusPublished - 2005 Sep 6

Keywords

  • Atmospheric pressure
  • Cross-sectional transmission electron microscopy (X-TEM)
  • Incubation layer
  • Plasma-enhanced chemical vapor deposition (PE-CVD)
  • Polycrystalline Si
  • Pulsed discharge
  • Raman scattering
  • X-ray diffraction (XRD)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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