Increasing roughness at SiO2/Si interface during thermal oxidation

Daisuke Hojo, N. Tokuda, K. Yamabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution


To realize highly reliable thin oxide with low leakage current, Si surface topography should be atomically controlled. The authors reported previously that SiO2/Si interface topography with wide step/terrace structures was roughened during thermal oxidation for comparatively thick SiO2 film at higher temperatures. On the other hand, Watanabe et al. (1998, 2000) and Miyata et al. (1998) reported a layer-by-layer oxidation at the SiO2/Si interface using scanning reflection electron microscopy (SREM) for relatively thin SiO2 film. The layer-by-layer oxidation means that the interface topography is preserved during oxidation. It apparently seems that those two phenomena are inconsistent with each other. In this study, roughness at the SiO2/Si interface was atomically investigated using AFM in an intermediated SiO2 thickness.

Original languageEnglish
Title of host publicationExtended Abstracts of International Workshop on Gate Insulator, IWGI 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)4891140216, 9784891140212
Publication statusPublished - 2001 Jan 1
EventInternational Workshop on Gate Insulator, IWGI 2001 - Tokyo, Japan
Duration: 2001 Nov 12001 Nov 2

Publication series

NameExtended Abstracts of International Workshop on Gate Insulator, IWGI 2001


OtherInternational Workshop on Gate Insulator, IWGI 2001

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Increasing roughness at SiO<sub>2</sub>/Si interface during thermal oxidation'. Together they form a unique fingerprint.

Cite this