Increase of GaP green LED efficiency with pre-annealing of the substrate

Takenori Tanno; Ken Suto; Yutaka Oyama; Jun Ichi Nishizawa

doi:10.1016/j.mssp.2003.05.009

Increase of GaP green LED efficiency with pre-annealing of the substrate

Takenori Tanno, Ken Suto, Yutaka Oyama, Jun Ichi Nishizawa

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

Abstract

Improvement of the intensity and purity of emission from GaP green light emitting diodes (LEDs) has been achieved by pre-annealing of the substrate. With annealing the substrate under 20kPa of phosphorus vapor for an hour just before the epitaxial growth, emission from deep level disappeared and saturation current density was decreased to 1×10^-16A/cm ². The output power of LED depends on the n-layer thickness in the case of 5-min pre-annealing. In contrast, with 1-h pre-annealing the dependence was not observed. This fact means that some kinds of nonstoichiometric defects diffuse from the surface region of the substrate during the growth of epitaxial layers, and affect the emission characteristics.

Original language	English
Pages (from-to)	433-435
Number of pages	3
Journal	Materials Science in Semiconductor Processing
Volume	6
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mssp.2003.05.009
Publication status	Published - 2003 Oct 1

Keywords

Diffusion
Electroluminescence
Liquid-phase epitaxy
Vapor pressure control

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2003.05.009

Cite this

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title = "Increase of GaP green LED efficiency with pre-annealing of the substrate",

abstract = "Improvement of the intensity and purity of emission from GaP green light emitting diodes (LEDs) has been achieved by pre-annealing of the substrate. With annealing the substrate under 20kPa of phosphorus vapor for an hour just before the epitaxial growth, emission from deep level disappeared and saturation current density was decreased to 1×10-16A/cm 2. The output power of LED depends on the n-layer thickness in the case of 5-min pre-annealing. In contrast, with 1-h pre-annealing the dependence was not observed. This fact means that some kinds of nonstoichiometric defects diffuse from the surface region of the substrate during the growth of epitaxial layers, and affect the emission characteristics.",

keywords = "Diffusion, Electroluminescence, Liquid-phase epitaxy, Vapor pressure control",

author = "Takenori Tanno and Ken Suto and Yutaka Oyama and Nishizawa, {Jun Ichi}",

year = "2003",

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doi = "10.1016/j.mssp.2003.05.009",

language = "English",

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pages = "433--435",

journal = "Materials Science in Semiconductor Processing",

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TY - JOUR

T1 - Increase of GaP green LED efficiency with pre-annealing of the substrate

AU - Tanno, Takenori

AU - Suto, Ken

AU - Oyama, Yutaka

AU - Nishizawa, Jun Ichi

PY - 2003/10/1

Y1 - 2003/10/1

N2 - Improvement of the intensity and purity of emission from GaP green light emitting diodes (LEDs) has been achieved by pre-annealing of the substrate. With annealing the substrate under 20kPa of phosphorus vapor for an hour just before the epitaxial growth, emission from deep level disappeared and saturation current density was decreased to 1×10-16A/cm 2. The output power of LED depends on the n-layer thickness in the case of 5-min pre-annealing. In contrast, with 1-h pre-annealing the dependence was not observed. This fact means that some kinds of nonstoichiometric defects diffuse from the surface region of the substrate during the growth of epitaxial layers, and affect the emission characteristics.

AB - Improvement of the intensity and purity of emission from GaP green light emitting diodes (LEDs) has been achieved by pre-annealing of the substrate. With annealing the substrate under 20kPa of phosphorus vapor for an hour just before the epitaxial growth, emission from deep level disappeared and saturation current density was decreased to 1×10-16A/cm 2. The output power of LED depends on the n-layer thickness in the case of 5-min pre-annealing. In contrast, with 1-h pre-annealing the dependence was not observed. This fact means that some kinds of nonstoichiometric defects diffuse from the surface region of the substrate during the growth of epitaxial layers, and affect the emission characteristics.

KW - Diffusion

KW - Electroluminescence

KW - Liquid-phase epitaxy

KW - Vapor pressure control

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DO - 10.1016/j.mssp.2003.05.009

M3 - Article

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VL - 6

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EP - 435

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 5-6

ER -

Increase of GaP green LED efficiency with pre-annealing of the substrate

Abstract

Keywords

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