Increase of GaP green LED efficiency with pre-annealing of the substrate

Takenori Tanno, Ken Suto, Yutaka Oyama, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review


Improvement of the intensity and purity of emission from GaP green light emitting diodes (LEDs) has been achieved by pre-annealing of the substrate. With annealing the substrate under 20kPa of phosphorus vapor for an hour just before the epitaxial growth, emission from deep level disappeared and saturation current density was decreased to 1×10-16A/cm 2. The output power of LED depends on the n-layer thickness in the case of 5-min pre-annealing. In contrast, with 1-h pre-annealing the dependence was not observed. This fact means that some kinds of nonstoichiometric defects diffuse from the surface region of the substrate during the growth of epitaxial layers, and affect the emission characteristics.

Original languageEnglish
Pages (from-to)433-435
Number of pages3
JournalMaterials Science in Semiconductor Processing
Issue number5-6
Publication statusPublished - 2003 Oct 1


  • Diffusion
  • Electroluminescence
  • Liquid-phase epitaxy
  • Vapor pressure control

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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