Incorporation of N in high N-content GaAsN films investigated by Raman scattering

S. Sanorpim, P. Panpech, S. Vijarnwannaluk, F. Nakajima, S. Kuboya, R. Katayama, K. Onabe

Research output: Contribution to journalConference articlepeer-review


High N-content GaAs1-xNx films (0 ≤ x ≤ 0.055) grown GaAs (001) substrates by MOVPE were investigated using micro-Raman spectroscopy. The nitrogen local vibration mode (N-LVM) which was clearly observed at around 468 - 475 cm-1 is used as a tool to examine the N incorporation. No change in the local environment of N is observed for the high N-containing films with N contents up to x = 0.055. The use of 514.5 nm-line Ar+ laser as the light source gives a linear dependence of the N contents determined by Raman spectroscopy (xRaman) on the N contents determined by the high resolution X-ray diffraction (xXRD) for x XRD ≤ 0.055, providing a realizable calibration method to determine N content in the high N-content GaAs1-xNx films. On the other hand, the use of longer wavelength (632.8 nm-line He-Ne laser) gives a best coincidence for only the lower N contents (x < 0.02). Since, the use of longer wavelength requires the thicker film owing to a thicker optical penetration depth. Thus, in our case, a deviation from the linear behavior for higher N contents, xXRD ≥ 0.02, is not due to the N-related reasons, but this is the results of the additional Raman scattering intensity of GaAs-LO from the substrate.

Original languageEnglish
Pages (from-to)2923-2925
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number9
Publication statusPublished - 2008 Dec 1
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 2007 Oct 152007 Oct 18

ASJC Scopus subject areas

  • Condensed Matter Physics


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