InAsN quantum dots grown on GaAs(001) substrates by MOVPE

S. Kuboya, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

The self-assembled InAsN quantum dots (QDs) were grown on the GaAs (001) substrates by MOVPE using 1,1-dimethlhydrazine (DMHy) and tertiarybutylarsine (TBAs) as the N and As precursors, respectively. The size distribution of the InAs(N) QDs grown at 450 °C and 420 °C is found bimodal. The InAsN QDs are typically 4-11 nm in height and 30-41 nm in width. The N incorporation into InAs induces the decrease of the QDs size, due to the increase of the wetting layer thickness. The density of the InAsN QDs with a nominal source supply of 2.6-3.0 ML, increases from 1.1-1.3×1010 cm-2 for the 450 °C growth to 2. 1-2.3×1010 cm-2 for the 420 °C growth. The photoluminescence peaks (at 300 K) of the InAs(N) QDs grown at both temperatures clearly show a red-shift to 1200 nm by N incorporation. This red-shift is in contrast with the blue-shift expected from the decrease in the dot sizes (quantum size effect), indicating the huge bandgap bowing induced by N incorporation is dominant over the quantum size effect.

Original languageEnglish
Pages (from-to)2387-2390
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number7
DOIs
Publication statusPublished - 2007 Dec 1
EventInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
Duration: 2006 Oct 222006 Oct 27

ASJC Scopus subject areas

  • Condensed Matter Physics

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