InAs/GaAs (1 1 1)A heteroepitaxial systems

H. Yamaguchi, K. Kanisawa, S. Miyashita, Y. Hirayama

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)

Abstract

We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (111)A substrates by molecular beam epitaxy. In contrast to conventionally used (001) surfaces, where Stranski-Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.

Original languageEnglish
Pages (from-to)285-292
Number of pages8
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume23
Issue number3-4 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Jul 1
Externally publishedYes
EventProceedings of the Fifth International Workshop on Expitaxial - Stuttgart, Germany
Duration: 2003 Oct 132003 Oct 15

Keywords

  • Heterostructures
  • InAs/AlGaSb
  • MEMS
  • NEMS
  • Piezoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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