Abstract
We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (111)A substrates by molecular beam epitaxy. In contrast to conventionally used (001) surfaces, where Stranski-Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.
Original language | English |
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Pages (from-to) | 285-292 |
Number of pages | 8 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 23 |
Issue number | 3-4 SPEC. ISS. |
DOIs | |
Publication status | Published - 2004 Jul 1 |
Externally published | Yes |
Event | Proceedings of the Fifth International Workshop on Expitaxial - Stuttgart, Germany Duration: 2003 Oct 13 → 2003 Oct 15 |
Keywords
- Heterostructures
- InAs/AlGaSb
- MEMS
- NEMS
- Piezoresistance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics