InAs/GaAs (1 1 1)A heteroepitaxial systems

H. Yamaguchi; K. Kanisawa; S. Miyashita; Y. Hirayama

doi:10.1016/j.physe.2003.11.278

InAs/GaAs (1 1 1)A heteroepitaxial systems

H. Yamaguchi, K. Kanisawa, S. Miyashita, Y. Hirayama

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (111)A substrates by molecular beam epitaxy. In contrast to conventionally used (001) surfaces, where Stranski-Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.

Original language	English
Pages (from-to)	285-292
Number of pages	8
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	23
Issue number	3-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physe.2003.11.278
Publication status	Published - 2004 Jul 1
Externally published	Yes
Event	Proceedings of the Fifth International Workshop on Expitaxial - Stuttgart, Germany Duration: 2003 Oct 13 → 2003 Oct 15

Keywords

Heterostructures
InAs/AlGaSb
MEMS
NEMS
Piezoresistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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Cite this

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abstract = "We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (111)A substrates by molecular beam epitaxy. In contrast to conventionally used (001) surfaces, where Stranski-Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.",

keywords = "Heterostructures, InAs/AlGaSb, MEMS, NEMS, Piezoresistance",

author = "H. Yamaguchi and K. Kanisawa and S. Miyashita and Y. Hirayama",

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journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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note = "Proceedings of the Fifth International Workshop on Expitaxial ; Conference date: 13-10-2003 Through 15-10-2003",

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T1 - InAs/GaAs (1 1 1)A heteroepitaxial systems

AU - Yamaguchi, H.

AU - Kanisawa, K.

AU - Miyashita, S.

AU - Hirayama, Y.

PY - 2004/7/1

Y1 - 2004/7/1

N2 - We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (111)A substrates by molecular beam epitaxy. In contrast to conventionally used (001) surfaces, where Stranski-Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.

AB - We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (111)A substrates by molecular beam epitaxy. In contrast to conventionally used (001) surfaces, where Stranski-Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.

KW - Heterostructures

KW - InAs/AlGaSb

KW - MEMS

KW - NEMS

KW - Piezoresistance

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DO - 10.1016/j.physe.2003.11.278

M3 - Conference article

AN - SCOPUS:3142709411

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SP - 285

EP - 292

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 3-4 SPEC. ISS.

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ER -