InAs/GaAs (1 1 1)A heteroepitaxial systems

H. Yamaguchi; K. Kanisawa; S. Miyashita; Y. Hirayama

doi:10.1016/j.physe.2003.11.278

InAs/GaAs (1 1 1)A heteroepitaxial systems

H. Yamaguchi, K. Kanisawa, S. Miyashita, Y. Hirayama

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (111)A substrates by molecular beam epitaxy. In contrast to conventionally used (001) surfaces, where Stranski-Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.

Original language	English
Pages (from-to)	285-292
Number of pages	8
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	23
Issue number	3-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physe.2003.11.278
Publication status	Published - 2004 Jul
Externally published	Yes
Event	Proceedings of the Fifth International Workshop on Expitaxial - Stuttgart, Germany Duration: 2003 Oct 13 → 2003 Oct 15

Keywords

Heterostructures
InAs/AlGaSb
MEMS
NEMS
Piezoresistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2003.11.278

Cite this

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title = "InAs/GaAs (1 1 1)A heteroepitaxial systems",

abstract = "We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (111)A substrates by molecular beam epitaxy. In contrast to conventionally used (001) surfaces, where Stranski-Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.",

keywords = "Heterostructures, InAs/AlGaSb, MEMS, NEMS, Piezoresistance",

author = "H. Yamaguchi and K. Kanisawa and S. Miyashita and Y. Hirayama",

note = "Funding Information: This work was supported by the NEDO International Joint Research Grant Program, “Nanoelasticity”. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; Proceedings of the Fifth International Workshop on Expitaxial ; Conference date: 13-10-2003 Through 15-10-2003",

year = "2004",

month = jul,

doi = "10.1016/j.physe.2003.11.278",

language = "English",

volume = "23",

pages = "285--292",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "3-4 SPEC. ISS.",

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TY - JOUR

T1 - InAs/GaAs (1 1 1)A heteroepitaxial systems

AU - Yamaguchi, H.

AU - Kanisawa, K.

AU - Miyashita, S.

AU - Hirayama, Y.

PY - 2004/7

Y1 - 2004/7

N2 - We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (111)A substrates by molecular beam epitaxy. In contrast to conventionally used (001) surfaces, where Stranski-Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.

AB - We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (111)A substrates by molecular beam epitaxy. In contrast to conventionally used (001) surfaces, where Stranski-Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.

KW - Heterostructures

KW - InAs/AlGaSb

KW - MEMS

KW - NEMS

KW - Piezoresistance

UR - http://www.scopus.com/inward/record.url?scp=3142709411&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142709411&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2003.11.278

DO - 10.1016/j.physe.2003.11.278

M3 - Conference article

AN - SCOPUS:3142709411

VL - 23

SP - 285

EP - 292

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 3-4 SPEC. ISS.

T2 - Proceedings of the Fifth International Workshop on Expitaxial

Y2 - 13 October 2003 through 15 October 2003

ER -

InAs/GaAs (1 1 1)A heteroepitaxial systems

Abstract

Keywords

ASJC Scopus subject areas

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