We report on the fabrication and characterization of 0.3-μm-thick piezoresistive cantilevers based on the InAs/AlGaSb heterostructure. The dependence of the displacement resolution on the cantilever size, which ranges from 20×10 to 2×1 μm2, has been studied by a novel characterization method using an atomic force microscope. The results show that downscaling the cantilevers improves their performances, and an optimum resolution of 0.26Å/Hz0.5 was obtained with a 3×1.5 μm2 cantilever at a modulation frequency of 714 Hz. A finite-element simulator allowed the calculation of the resonance frequencies and a maximum value of 20.5 MHz was obtained for the 3 × 1.5μm 2 cantilever.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||3 B|
|Publication status||Published - 2004 Mar 15|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)