InAs/AlGaSb heterostructure stress sensor for MEMS/NEMS applications

H. Yamaguchi, S. Miyashita, Y. Hirayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Semiconductor micro- and nano-electromechanical systems (MEMS/NEMS) have the potential to bring about a revolution in the application of semiconductor fine-structure devices, such as high-resolution actuators and sensors, high-frequency signal processing components, and medical diagnostic devices. In addition, when device size reaches the nanometer scale and the characteristic frequency becomes sufficiently high to quantize the freedom of mechanical motion, novel quantum mechanical functions can be introduced. Compared with the commonly used materials systems, such as Si/SiO2 and GaAs/AlGaAs-based heterostructures, InAs-based structures have the advantage that the surface Fermi level pinning in the conduction band makes it possible to fabricate much smaller conductive structures than other semiconductors. We have successfully fabricated a novel piezoresistive stress sensor with a surface InAs conductive layer of nanometer-scale thickness based on MBE-grown InAs/AlGaSb heterostructures. The size of this self-sensing device can be reduced to a nanometer scale and it is expected to be a key component in future MEMS/NEMS applications.

Original languageEnglish
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages175-176
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
Publication statusPublished - 2002 Jan 1
Externally publishedYes
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: 2002 Sep 152002 Sep 20

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period02/9/1502/9/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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    Yamaguchi, H., Miyashita, S., & Hirayama, Y. (2002). InAs/AlGaSb heterostructure stress sensor for MEMS/NEMS applications. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 175-176). [1037816] (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037816