InAs/AlGaSb heterostructure displacement sensors for MEMS/NEMS applications

Hiroshi Yamaguchi, Sen Miyashita, Yoshiro Hirayama

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


We have successfully fabricated a novel microelectromechanical displacement sensor with a surface InAs conductive layer of nanometer-scale thickness based on MBE-grown InAs/AlGaSb heterostructures. Sub-angstrom cantilever displacement is detectable and the sensitivity increases with decreasing thickness. Tapping-mode AFM characterization clarified the frequency response of this device, showing the fundamental mode resonance frequency of about 300 kHz.

Original languageEnglish
Pages (from-to)556-559
Number of pages4
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 2003 Apr
Externally publishedYes
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: 2002 Sep 152002 Sep 20


  • A3. Molecular beam epitaxy
  • B2. Semiconducting III-V materials
  • B3. Heterojunction semiconductor devices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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