Abstract
We have successfully fabricated a novel self-sensing mechanical displacement sensor with a surface InAs conductive layer of nanometer-scale thickness based on MBE-grown InAs/AlGaSb heterostructures. Sub-angstrom cantilever displacement is detectable and the sensitivity is increased with decreasing thickness. Tapping mode AFM characterization clarified the spatially resolved frequency response of this device, showing the lowest mode resonance frequency of about 300kHz.
| Original language | English |
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| Pages (from-to) | 247-250 |
| Number of pages | 4 |
| Journal | Institute of Physics Conference Series |
| Volume | 174 |
| Publication status | Published - 2003 Dec 1 |
| Externally published | Yes |
| Event | Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland Duration: 2002 Oct 7 → 2002 Oct 10 |
ASJC Scopus subject areas
- Physics and Astronomy(all)