InAs/AlGaSb heterostructure displacement sensors

H. Yamaguchi; S. Miyashita; Y. Hirayama

InAs/AlGaSb heterostructure displacement sensors

H. Yamaguchi, S. Miyashita, Y. Hirayama

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have successfully fabricated a novel self-sensing mechanical displacement sensor with a surface InAs conductive layer of nanometer-scale thickness based on MBE-grown InAs/AlGaSb heterostructures. Sub-angstrom cantilever displacement is detectable and the sensitivity is increased with decreasing thickness. Tapping mode AFM characterization clarified the spatially resolved frequency response of this device, showing the lowest mode resonance frequency of about 300kHz.

Original language	English
Pages (from-to)	247-250
Number of pages	4
Journal	Institute of Physics Conference Series
Volume	174
Publication status	Published - 2003 Dec 1
Externally published	Yes
Event	Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland Duration: 2002 Oct 7 → 2002 Oct 10

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "InAs/AlGaSb heterostructure displacement sensors",

abstract = "We have successfully fabricated a novel self-sensing mechanical displacement sensor with a surface InAs conductive layer of nanometer-scale thickness based on MBE-grown InAs/AlGaSb heterostructures. Sub-angstrom cantilever displacement is detectable and the sensitivity is increased with decreasing thickness. Tapping mode AFM characterization clarified the spatially resolved frequency response of this device, showing the lowest mode resonance frequency of about 300kHz.",

author = "H. Yamaguchi and S. Miyashita and Y. Hirayama",

year = "2003",

month = dec,

day = "1",

language = "English",

volume = "174",

pages = "247--250",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

publisher = "IOP Publishing Ltd.",

note = "Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors ; Conference date: 07-10-2002 Through 10-10-2002",

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T1 - InAs/AlGaSb heterostructure displacement sensors

AU - Yamaguchi, H.

AU - Miyashita, S.

AU - Hirayama, Y.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - We have successfully fabricated a novel self-sensing mechanical displacement sensor with a surface InAs conductive layer of nanometer-scale thickness based on MBE-grown InAs/AlGaSb heterostructures. Sub-angstrom cantilever displacement is detectable and the sensitivity is increased with decreasing thickness. Tapping mode AFM characterization clarified the spatially resolved frequency response of this device, showing the lowest mode resonance frequency of about 300kHz.

AB - We have successfully fabricated a novel self-sensing mechanical displacement sensor with a surface InAs conductive layer of nanometer-scale thickness based on MBE-grown InAs/AlGaSb heterostructures. Sub-angstrom cantilever displacement is detectable and the sensitivity is increased with decreasing thickness. Tapping mode AFM characterization clarified the spatially resolved frequency response of this device, showing the lowest mode resonance frequency of about 300kHz.

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M3 - Conference article

AN - SCOPUS:10444232742

VL - 174

SP - 247

EP - 250

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

SN - 0951-3248

T2 - Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors

Y2 - 7 October 2002 through 10 October 2002

ER -