InAs/AlGaSb heterostructure displacement sensors

H. Yamaguchi, S. Miyashita, Y. Hirayama

Research output: Contribution to journalConference articlepeer-review

Abstract

We have successfully fabricated a novel self-sensing mechanical displacement sensor with a surface InAs conductive layer of nanometer-scale thickness based on MBE-grown InAs/AlGaSb heterostructures. Sub-angstrom cantilever displacement is detectable and the sensitivity is increased with decreasing thickness. Tapping mode AFM characterization clarified the spatially resolved frequency response of this device, showing the lowest mode resonance frequency of about 300kHz.

Original languageEnglish
Pages (from-to)247-250
Number of pages4
JournalInstitute of Physics Conference Series
Volume174
Publication statusPublished - 2003 Dec 1
Externally publishedYes
EventCompound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland
Duration: 2002 Oct 72002 Oct 10

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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