InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates

S. P. Guo, A. Shen, Y. Ohno, H. Ohno

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) grown on GaAs (100), (211)B and (311)B substrates by molecular beam epitaxy at different growth temperatures (Ts) have been investigated. QDs were observed after deposition of 2ML100 (or 4ML311) of InAs on GaAs (100) (or (311)B) at Ts ranging from 450°C to 530°C. The average density decreases and the average size increases monotonically with increasing Ts. QDs with bimodal size distribution were formed when 6ML211 of InAs was deposited on GaAs (2 1 1)B at lower Ts. When the same amount of InAs was deposited at higher Ts, however, QDHs were observed. The photoluminescence intensity of the QDs and QDHs showed similar temperature dependence, whereas the excitation density dependence showed quite different behaviors.

Original languageEnglish
Pages (from-to)672-677
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume2
Issue number1-4
DOIs
Publication statusPublished - 1998 Jul 15

Keywords

  • Molecular beam epitaxy
  • Photoluminescence
  • Quantum dashes
  • Quantum dots

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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