InAs quantum cascade lasers based on coupled quantum well structures

Keita Ohtani, Kazuue Fujita, Hideo Ohno

Research output: Contribution to journalArticle

Abstract

We report the operation of mid-infrared InAs quantum cascade lasers based on coupled quantum well structures. The laser structures are grown on n-type InAs(100) substrate by solid-source molecular beam epitaxy. The resonant longitudinal optical phonon scattering is used for carrier extraction from ground state in active layers. The laser emitting around 9.1 μm in the pulse mode operates up to 160K. The observed minimum threshold current density is 3.6kA/cm2 at 80 K. We also measure the waveguide loss and compare with the design.

Original languageEnglish
Pages (from-to)2572-2574
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
Publication statusPublished - 2005 Apr 1

Keywords

  • Coupled quantum well
  • InAs/AlGaSb
  • Molecular beam epitaxy
  • Quantum cascade laser

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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