InAs-inserted-channel inalas/ingaas inverted hemts with nbn electrodes

Tatsushi Akazaki, Junsaku Nitta, Hideaki Takayanagi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We report on the fabrication of InAs-insertedchannel InAlAs/InGaAs inverted HEMTs with NbN electrodes made by using a DC magnetron sputtering deposition and we describe the device characteristics we obtained. Excellent pinchoff characteristics were obtained even at -10 K when NbN electrodes retain their superconductivity. For a 3-u,m-gate device, the maximum extrinsic transconductance at 10 K was 300 mS/mm, even at the very low drain voltage of 0.2 V. We found that the HEMTs with NbN electrodes, not only have superior characteristics at -10 K that exceed the critical temperature of Nb, but are also able to combine with NbN Josephson junctions.

Original languageEnglish
Pages (from-to)4253-4256
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Issue number2 PART 3
Publication statusPublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'InAs-inserted-channel inalas/ingaas inverted hemts with nbn electrodes'. Together they form a unique fingerprint.

Cite this